Search results for MOSFET
NEC Develops Highly-Reliable CMOSFET with Phase Controlled NiSi (NFET) & Ni3Si (PFET) Gate Electrode
Jun 16, 2005 |
5 / 5 (1) |
0
NEC Corporation ("NEC") today announced the development of a transistor featuring a new gate stack structure using a hafnium ("Hf")-based, high-k dielectric and a metal gate electrode, which simultaneously realize significant ...
Freescale, University of Florida advance Moore's law
Jun 01, 2005 |
not rated yet |
0
Industry’s first double-gate transistor model enables smaller, more powerful silicon products that use less energy Freescale Semiconductor and the University of Florida have created the industry's first double-gate tra ...
New mathematical model better describes transistor behavior
May 11, 2005 |
5 / 5 (3) |
0
Penn State and Philips researchers have merged the best features of their respective approaches to produce a new mathematical model that describes the behavior of the MOS transistor in a wide class of integrated circuits ...
SEMATECH Identifies Top Technical Challenges for 2006; Adds Transistor Scaling
Apr 20, 2005 |
1.5 / 5 (2) |
0
SEMATECH today announced its Top Technical Challenges for 2006, continuing to underscore advanced gate stack, 193 nm immersion and EUV lithography, mask infrastructure, and low-k dielectrics with process compatibility. Consortium ...
TI Unveils High-Performance Power Supply Chip for Large Screen LCD Displays, TVs
Apr 13, 2005 |
not rated yet |
0
Texas Instruments Incorporated (TI) announced today a high-performance power management integrated circuit (IC) that efficiently supports all four voltage requirements in a thin film transistor (TFT) liquid crystal display ...
Renesas Releases DC/DC Converter Power MOSFET Chip Set Achieving Industry's Highest Power Efficiency of 90 percent
Apr 13, 2005 |
2.7 / 5 (3) |
0
Renesas Technology Corp. today announced a power MOSFET chip set, comprising a high-side(*1) RJK0305DPB and low-side(*1) RJK0301DPB, for DC-DC converters used in servers, notebook PCs, communication devices, and similar products.Sample ...
High Voltage DTMOS Power MOSFET Using A Super Junction Structure To Reduce Power Consumption
Mar 29, 2005 |
2.7 / 5 (3) |
0
Continuing its leadership role in developing innovative power semiconductors, Toshiba America Electronic Components, Inc. (TAEC) and its parent Toshiba Corp. announced a new power MOSFET called DTMOS, that employs a new super ...
Infineon Launches CoolMOS CS Server Series High-Voltage Power Transistors for High-End Power Supplies
Mar 08, 2005 |
not rated yet |
0
New MOSFETs Offer World's Lowest On-State Resistance and Fastest Switching Speed Continuing its tradition of pioneering innovations for the semiconductor industry, Infineon Technologies today launched its CoolMOS CS Server ...
New Low Voltage Trench MOSFETs Improve Power Circuit Efficiency and Battery-Life
Jan 28, 2005 |
1.5 / 5 (2) |
0
Further expanding its portfolio of industry-leading Trench technology devices, ON Semiconductor today introduced eight new N-channel and P-channel, low voltage Trench MOSFETs. These devices reduce resistance between drain ...
Infineon Demonstrated New Tunneling FET Enabling Scalable Ultra-Low Voltage Processes in Standard Silicon Technology
Dec 15, 2004 |
4.5 / 5 (4) |
0
Infineon Demonstrated New Tunneling Field Effect Transistors Enabling Scalable Ultra-Low Voltage Processes in Standard Silicon Technology At the 2004 IEEE International Electron Devices Meeting (IEDM) in San Francisco (De ...
STMicroelectronics Unveils Advanced Non-Volatile Memory and Advanced CMOS Platform Developments
Dec 10, 2004 |
2 / 5 (1) |
0
STMicroelectronics, one of the world's leading suppliers of semiconductor devices, will participate as presenter or co-author in fifteen papers at the IEDM 2004 (International Electron Devices Meeting) Conference, which takes ...
Philips highlights leading consumer-oriented semiconductor R&D at IEDM 2004
Dec 08, 2004 |
not rated yet |
0
Record-breaking performance of 90-nm RF CMOS process takes advanced development to new levels At this year's IEEE International Electron Devices Meeting (IEDM, San Francisco, USA, 13 - 15 December 2004), Philips' R&D scientis ...
National Expands Industry-Leading Family of Gate Drivers with the Introduction of Two Ultra-Small Products
Sep 20, 2004 |
not rated yet |
0
National Semiconductor Corporation today introduced the latest additions to its family of high-voltage power control integrated circuits designed to provide efficient DC-DC power supply solutions. The dual-channel ...
MOSFET Technology with Zero-Voltage and Zero-Current Transitions
Sep 03, 2004 |
2 / 5 (2) |
0
STMicroelectronics has introduced an n-channel MOSFET for use in HID lamps, high-end ballasts and switch-mode power supplies that use zero-voltage and zero-current transitions.The STx9NK60ZD is the first dev ...
Toshiba Unveils New Smart Thin Package for Power MOSFETs With Industry's Smallest Mount Area Per MilliOhm of ON-Resistan
Jul 29, 2004 |
not rated yet |
0
First MOSFETs in Smart Thin Package Series Offer Increased Power Dissipation, Very Low ON-Resistance Construction to Improve Lithium Ion Battery Performance Expanding innovative advanced packaging for its power semiconduct ...
