Search results for MuGFET:
IMEC concludes FEOL installation and enters into alliances for copper/low-k interconnect technology
Jul 11, 2005 |
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IMEC successfully concludes installation of front-end-of-line (FEOL) tools with processing of first pathfinder lots. Strategic agreements with leading equipment manufacturers Applied Materials, Inc., ASM International and ...
IMEC to create solutions for sub-45nm CMOS scaling
Jun 17, 2005 |
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Together with its CMOS core partners, IMEC will announce several research breakthroughs on new gate-stack technologies and multiple-gate FET (MuGFET) devices at the 2005 Symposium on VLSI Technology. A combination of advances ...
Soitec, ATDF to Develop Multi-Gate Field Effect Transistors (MuGFETs) for 45-nm Technology and Beyond
Jan 05, 2005 |
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In an effort to accelerate the development of new-generation transistors, Soitec, today announced its participation as the SOI substrate supplier in a development program led by ATDF -- Advanced Technology Development Facility ...
IMEC reports record in tall triple-gate device SRAM cell for 45nm node
Dec 13, 2004 |
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At today’s IEEE International Electron Devices Meeting in San Francisco, IMEC, Europe’s largest independent nanoeelctronics and nanotechnology research center, announced that it had achieved the smallest triple-gate device SRA ...
Success of 45 nm Node Technology for MuGFET, a Next-Generation Transistor
Aug 30, 2004 |
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ATDF, Inc. with assistance from HPL Technologies, Inc. of San Jose, has successfully demonstrated process capability at the 45 nm technology node for a multi-gate field effect transistor (MuGFET), an advanced semiconductor ...
