Search results for NAND:
Semiconductor revenue to fall 11 percent: Gartner
Nov 16, 2009 |
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Worldwide semiconductor revenue is expected to decline by more than 11 percent in 2009 over last year, less than previously forecast, market research firm Gartner said Monday.
Samsung Develops Advanced Packaging Technology to Achieve a 0.6mm-thick 8-chip Package
Nov 05, 2009 |
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Samsung Electronics announced today that it has developed the world's thinnest multi-die package, one that measures a mere 0.6mm in height. Designed initially for 32 gigabyte (GB) densities, the new memory ...
Intel Reports Breakthrough in Stacked, Cross Point Phase Change Memory Technology
Oct 29, 2009 |
3.9 / 5 (11) |
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Intel Corp. and Numonyx today announced a key breakthrough in the research of phase change memory (PCM), a new non-volatile memory technology that combines many of the benefits of today's various memory types.
SanDisk Ships Flash Memory Cards With 64 Gigabit X4 NAND Technology
Oct 16, 2009 |
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SanDisk announced it has begun production shipments of flash memory cards based on the company's advanced X4 flash memory technology. This innovative new technology holds four bits of data in each memory cell, ...
Samsung expects strong 3rd-quarter profit
Oct 06, 2009 |
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(AP) -- Samsung Electronics Co. said Tuesday that profit likely surged in the third quarter on higher sales, amid a brightening outlook for the world's largest manufacturer of computer memory chips and flat ...
Intel's Atom CE 4100 SoC Will Transform Internet TV (w/ Video)
Sep 25, 2009 |
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(PhysOrg.com) -- At the IDF event, in Santa Clara, California, Intel announced the debut of their newest System-on-Chip (SoC), the Intel Atom processor CE4100. The CE4100 SoC is designed exclusively to facilitate ...
Toshiba Adds 32nm mSATA And Half-Slim Solid State Drive Modules
Sep 21, 2009 |
3.8 / 5 (4) |
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Toshiba today announced a series of solid state drive (SSD) modules using the latest generation Toshiba 32nm MLC NAND flash, at Intel Developers Forum 2009. The Toshiba SG2 modules are offered in two types, ...
Intel, Micron Achieve Industry’s Most Efficient NAND Product Using 3-Bit-Per-Cell Technology
Aug 11, 2009 |
3 / 5 (4) |
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Intel Corporation and Micron Technology today announced the development of a new 3-bit-per-cell (3bpc) multi-level cell (MLC) NAND technology, leveraging their award-winning 34-nanometer NAND process. The chips are typically ...
Toshiba eyes new businesses for recovery
Aug 05, 2009 |
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Toshiba Corp. said Wednesday it aimed to expand its energy, healthcare and environment-related businesses as it targets a strong recovery in earnings within the next three years.
Toshiba to Launch First SDXC Memory Card
Aug 04, 2009 |
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Toshiba Corporation today announced the launch of the world's first 64GB SDXC Memory Card with the world's fastest data transfer rate compliant with the new SD Memory Standard Ver. 3.00, UHS 104.
Japan's Toshiba still in red
Jul 29, 2009 |
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Japanese high-tech giant Toshiba said Wednesday it had lost more than 600 million dollars in the fiscal first quarter as the economic downturn hit sales of televisions and other electronics.
Intel Delivers Industry's First 34-Nanometer NAND Flash Solid-State Drives
Jul 21, 2009 |
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Intel is moving to a more advanced, 34- nanometer manufacturing process for its NAND flash-based Solid State Drive (SSD) products, which are an alternative to a computer's hard drive. The move to 34nm will ...
Samsung Introduces New 45nm Application Processor
Jun 29, 2009 |
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Samsung Electronics announced today the latest in its popular, ARM11 series of application processors, the S5P6440. Designed using Samsung’s advanced 45nm low power CMOS process technology, the S5P6440 offers ...
Toshiba to launch 32nm process NAND flash memory
Apr 27, 2009 |
5 / 5 (3) |
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Toshiba Corporation today announced that it will start shipping NAND flash memory products fabricated with 32nm process technology. Samples of the world's first 32nm generation, 32-gigabit (Gb) single chips (4 gigabytes (GB)), ...
SanDisk, Toshiba Develop 32-nanometer NAND Flash Technology
Feb 11, 2009 |
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SanDisk and Toshiba today announced the co-development of multi-level cell (MLC) NAND flash memory using 32-nanometer process technology to produce a 32-gigabit (Gb) 3-bits-per-cell (X3) memory chip. The breakthrough ...
