Search results for SRAM:
Infineon Successfully Produced First 65nm Samples in Multiple Fabs
Feb 07, 2006 |
5 / 5 (1) |
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Infineon Technologies AG has produced first sample chips in its advanced 65nm low-power and high-performance CMOS platform technology. Infineon leveraged the results of the industry leading 65nm/45nm alliance composed of ...
IBM Alliances Announce Advancement in High-K/Metal Gate Technology
Dec 14, 2007 |
4.6 / 5 (34) |
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IBM and its joint development partners -- AMD, Chartered Semiconductor Manufacturing, Freescale, Infineon, and Samsung -- announced an innovative approach to speed the implementation of a breakthrough material ...
Elpida Memory Develops Two New High-Speed DRAM Technologies Designed to Increase IT Infrastructure Performance
Jun 28, 2004 |
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DRAM Speed as Fast as SRAM and DDR1/DDR2 SDRAM Produced on a Single 1 Gigabit Chip TOKYO, June 28, 2004 - Elpida Memory, Inc (Elpida), Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced t ...
0.4-V DRAM array technology using twin cells for next generation mobile devices
Jun 27, 2005 |
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Enabling the longer retention time and fast read/write operation under low voltage condition Hitachi, Ltd. in cooperation with Elpida Memory, Inc., have proposed a new DRAM (*1) circuit design enabling 0.4-V operation. The proposed array employs a twin cell sch ...
NEC Develops a Three-Dimensional Chip-Stacked Flexible Memory
Feb 10, 2009 |
2.3 / 5 (3) |
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NEC Corporation announced today the development of chip-stacked flexible memory, which can be used to achieve a new system-on-chip (SoC) architecture. The new SoC's architecture consists of separate logic ...
Samsung Unveils New Powerhouse Fusion Memory Solution - OneDRAM
Dec 13, 2006 |
4 / 5 (11) |
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Samsung Electronics today announced that it has developed a prototype fusion memory chip that can significantly increase the data processing speed between processors in mobile applications.
IMEC to create solutions for sub-45nm CMOS scaling
Jun 17, 2005 |
4 / 5 (2) |
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Together with its CMOS core partners, IMEC will announce several research breakthroughs on new gate-stack technologies and multiple-gate FET (MuGFET) devices at the 2005 Symposium on VLSI Technology. A combination of advances ...
UMC First Foundry to Introduce 0.18um 32 Volt High Voltage Process
Aug 22, 2004 |
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UMC, a world leading semiconductor foundry, today announced the availability of the foundry industry's most advanced 0.18um embedded high voltage technology. This process targets the growing portable liquid crystal display ...
IBM Reveals Breakthrough eDRAM Memory Technology
Feb 14, 2007 |
4.5 / 5 (67) |
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In papers presented at the International Solid State Circuits Conference, IBM revealed a first-of-its-kind, on-chip memory technology that features the fastest access times ever recorded in eDRAM (Embedded ...
IMEC advancing state-of-the-art in FinFETs
Jun 13, 2007 |
5 / 5 (3) |
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At this week’s VLSI Symposium, IMEC presents significant progress in the manufacturability, circuit performance and reliability of FinFETs. The results advance FinFET process technology towards being a candidate ...
TSMC Unveils Nexsys 65nm Process Technology Plans
May 03, 2005 |
2 / 5 (1) |
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Taiwan Semiconductor Manufacturing Company, unveiled its newest semiconductor manufacturing process today at a Technology Symposium attended by over 400 of the industry’s leading IC companies. First wafers are expected in ...
Show Must Go On: Intel Keeps Moore's Law on Track with 65 nm Technology
Aug 30, 2004 |
1 / 5 (1) |
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A significant milestone in developing next-generation chip manufacturing technology has been achieved by Intel Corporation. The company has built fully functional 70-megabit static random access memory (SRAM) c ...
Industry's first 2GB SO-DIMM for high performance server and notebook applications
Jun 22, 2004 |
2.7 / 5 (3) |
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Hynix Semiconductor Inc. today announced availability of its 1Gb based DDR2 4GB Registered Dual In-line Memory Module (RDIMM) and the industry's first 2GB SO-DIMM for high performance server and notebook applications. The ...
Toshiba, NEC Electronics, and Fujitsu Agree on Common Specifications for PSRAM
Sep 07, 2004 |
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Toshiba Corporation, NEC Electronics Corporation, and Fujitsu Limited today announced that they have agreed on standard interface specifications for Pseudo Static Random Access Memory (PSRAM)(1) with burst mode. Based on the specifications, known as COSMO ...
Samsung Develops World's First Eight-Die Multi-Chip Package Technology for Multimedia Cell Phones
Jan 10, 2005 |
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Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has developed the world's first eight-die multi-chip package (MCP) technology, designed for use in high-capacity mobile devices s ...
