Search results for SiGen:
SiGen Announces Breakthrough in Direct Silicon Bond Substrate Technology
Apr 18, 2006 |
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Silicon Genesis Corporation (SiGen) announced today that it has developed the process modifications to manufacture direct silicon bonded substrates. Direct silicon bond (DSB) substrates are fabricated by bonding and electrically ...
SiGen Granted Key Strained-Silicon Substrate Patent
Oct 04, 2004 |
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Silicon Genesis Corporation (SiGen) announced today that it has received a key patent in the area of fabricating strained silicon and silicon-on-insulator (SOI) substrates using a layer transfer process used in next-generation high-speed and low- ...
Breakthrough in Silicon Technology: Wafer-Level Strained Silicon Technology Announced by SiGen
Aug 11, 2004 |
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Silicon Genesis Corporation (SiGen) announced today that it has successfully developed a new wafer-level strained substrate technology, called “Next-Generation Strain” or NGS. NGS features uniaxial strain instead ...
