Search results for electron devices:
Micromachined piezoelectric harvester drives fully autonomous wireless sensor
15 hours ago |
5 / 5 (8) |
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For the first time, a piezoelectric harvesting device fabricated by MEMS technology generates a record of 85μW electrical power from vibrations. A wafer level packaging method was developed for robustness. ...
NEC Integrates NanoBridge in the Cu Interconnects of Si LSI
Dec 14, 2009 |
3 / 5 (2) |
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NEC Corporation, in collaboration with the National Institute of Materials Science, today announced the successful integration of NanoBridge, a solid electrolyte non-volatile crossbar switch, in Cu interconnects ...
Scientists discover mechanism behind superinsulation
Dec 14, 2009 |
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(PhysOrg.com) -- Scientists at the U.S. Department of Energy's Argonne National Laboratory have discovered the microscopic mechanism behind the phenomenon of superinsulation, the ability of certain materials ...
New structure could produce efficient semiconductor laser sources
Dec 14, 2009 |
4.7 / 5 (3) |
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(PhysOrg.com) -- University of Wisconsin-Madison researchers have achieved a nanoscale laser structure they anticipate will produce semiconductor lasers in the next two years that are more than twice as efficient ...
Elusive 'hot' electrons captured in ultra-thin solar cells
Dec 11, 2009 |
4.5 / 5 (12) |
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Boston College researchers have observed the "hot electron" effect in a solar cell for the first time and successfully harvested the elusive charges using ultra-thin solar cells, opening a potential avenue to improved solar ...
Stanford researchers develop the next generation of retinal implants
Dec 10, 2009 |
4.9 / 5 (10) |
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(PhysOrg.com) -- A team of Stanford researchers has developed a new generation of retinal implants that aims to provide higher resolution and make artificial vision more natural.
New techniques make carbon-based integrated circuits more practical
Dec 09, 2009 |
4.9 / 5 (13) |
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(PhysOrg.com) -- Stanford engineers have built what they believe is a chip with the most advanced computing and storage elements made of carbon nanotubes to date by devising a way to root out the stubborn ...
Toshiba Develops High Performance CMOS Device Technology for 20nm Generation LSI
Dec 09, 2009 |
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(PhysOrg.com) -- Toshiba Corporation today announced that it has developed a breakthrough technology for steep channel impurity distribution that delivers a solution to a key problem for 20nm generation CMOS ...
Life after silicon: Using exotic materials to help microchips keep improving
Dec 08, 2009 |
4.5 / 5 (8) |
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(PhysOrg.com) -- The huge increases in the power and capacity of computers, cell phones and communications networks in the last 40 years have been the result of ever-shrinking silicon transistors. But silicon ...
Panasonic Develops A Gallium Nitride (GaN) Inverter IC for Motor Drive with High Efficiency
Dec 08, 2009 |
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Panasonic today announced the development of a Gallium Nitride (GaN) -based monolithic inverter integrated circuit (IC) for motor drive. The integrated six GaN-based transistors can be independently driven ...
Wizard at circuits, physics
Dec 03, 2009 |
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(PhysOrg.com) -- Donhee Ham, Gordon McKay Professor of Electrical Engineering and Applied Physics, uses his personal energy and understanding of physics to design innovative integrated circuits.
Researchers put a new spin on atomic musical chairs
Dec 02, 2009 |
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Researchers from the National Institute of Standards and Technology and the Naval Research Laboratory have developed a new way to introduce magnetic impurities in a semiconductor crystal by prodding it with ...
Researchers Design Triple Quantum Dot for Quantum Information Applications
Nov 30, 2009 |
4.7 / 5 (18) |
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(PhysOrg.com) -- While quantum dots have existed since the 1980s, only in the past decade have physicists successfully created lateral few-electron single quantum dots. These quantum dots enable physicists ...
Glasgow scientists predict the unpredictable to guide future nano-chip design
Nov 29, 2009 |
4.8 / 5 (4) |
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Scientists at the University of Glasgow, in collaboration with colleagues from Edinburgh, Manchester, Southampton and York universities, have developed technology which will help microchip designers create ...
Fujitsu Develops Technology for Low-Temperature Full-Service Direct Formation of Graphene Transistors on Large-Scale Sub
Nov 27, 2009 |
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Fujitsu Laboratories today announced, as a world first, the development of a novel technology for forming graphene transistors directly on the entire surface of large-scale insulating substrates at low temperatures ...
