Search results for silicon transistors:
New material for nanoscale computer chips
Nanotechnology / Nanomaterials
Aug 17, 2009 |
5 / 5 (4) |
2
Nanochemists from the Chinese Academy of Sciences and Nano-Science Center, Department of Chemistry at University of Copenhagen have developed nanoscale electric contacts out of organic and inorganic nanowires. ...
New 'finFETs' promising for smaller transistors, more powerful chips
Nov 10, 2009 |
4.8 / 5 (13) |
3
(PhysOrg.com) -- Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers ...
Carbon nanoribbons could make smaller, speedier computer chips
May 27, 2008 |
4.4 / 5 (23) |
2
Stanford chemists have developed a new way to make transistors out of carbon nanoribbons. The devices could someday be integrated into high-performance computer chips to increase their speed and generate less ...
Large area transistors get helping hand from quantum effects
Aug 08, 2008 |
4.4 / 5 (14) |
0
Researchers from the Hitachi Central Research Laboratory, Japan, and the Advanced Technology Institute of the University of Surrey today report that nano-designed transistors for the large area display and sensor application ...
Rensselaer student invents alternative to silicon chip
May 13, 2008 |
4.6 / 5 (105) |
13
Even before Weixiao Huang received his doctorate from Rensselaer Polytechnic Institute, his new transistor captured the attention of some of the biggest American and Japanese automobile companies. The 2008 ...
Scientists Develop World's Fastest Graphene Transistor
Dec 19, 2008 |
4.9 / 5 (13) |
5
(PhysOrg.com) -- IBM Researchers today announced that they demonstrated the operation of graphene field-effect transistors at GHz frequencies, and achieved the highest frequencies reported so far using this ...
Two chips in one: Researchers combine microprocessor materials
Sep 16, 2009 |
5 / 5 (10) |
1
(PhysOrg.com) -- An MIT team led by Tomás Palacios, assistant professor in the Department of Electrical Engineering and Computer Science, has succeeded in combining two semiconductor materials, silicon ...
Graphene used to create world's smallest transistor
Apr 17, 2008 |
4.6 / 5 (50) |
4
Researchers have used the world's thinnest material to create the world's smallest transistor, one atom thick and ten atoms wide.
Research shows there could be no end in sight for Moore's Law
Dec 09, 2008 |
4 / 5 (39) |
13
The fast pace of growing computing power could be sustained for many years to come thanks to new research from the UK's National Physical Laboratory (NPL) that is applying advanced techniques to magnetic semiconductors.
A bright future for plastics -- robot 'skin,' flexible laptops and electric posters
Jun 30, 2008 |
4.3 / 5 (18) |
0
WITH market analysts predicting a ten fold increase in the value of the organic light emitting display industry, from £1.5 billion to £15.5 billion, by 2014, it is no wonder that scientists and governments alike are keen ...
Could a paper transistor offer an alternative to silicon?
Sep 22, 2009 |
4.5 / 5 (15) |
6
(PhysOrg.com) -- As technology advances, scientists look for ways to enhance electronic applications and devices. Indeed, electronics are getting smaller and more diverse. And as this happens, there is an increased requirement ...
Putting the squeeze on an old material could lead to 'instant on' electronic memory
Apr 16, 2009 |
4.7 / 5 (12) |
1
(PhysOrg.com) -- The technology of storing electronic information - from old cassette tapes to shiny laptop computers - has been a major force in the electronics industry for decades.
Silicon with afterburners: New process could be boon to electronics manufacturer
Nanotechnology / Nanomaterials
Jul 23, 2009 |
4.7 / 5 (11) |
0
Scientists at Rice University and North Carolina State University have found a method of attaching molecules to semiconducting silicon that may help manufacturers reach beyond the current limits of Moore's ...
Portuguese team makes first paper based transistor
Jul 22, 2008 |
4.6 / 5 (61) |
4
(PhysOrg.com) -- Elvira Fortunato and colleagues from the Centro de Investigação de Materiais (Cenimat/I3N), at Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, made the first Field Effect ...
IMEC shows optimizations for next-generation transistors
Jul 14, 2009 |
4.5 / 5 (2) |
0
IMEC has achieved promising results in the race to scale CMOS to 22nm and below. The breakthroughs from its transistor scaling programs include a successful integration of the laser-anneal technique in a high-K/metal-gate ...
