Search results for +"DRAM" :
WTO gives Japan until September to change chip import rules(AP) -- The World Trade Organization is giving Japan until Sept. 1 to change its punitive charges on imports of South Korean computer memory chips. |
 Researchers Prove Existence of New Basic Element for Electronic Circuits -- 'Memristor'HP today announced that researchers from HP Labs have proven the existence of what had previously been only theorized as the fourth fundamental circuit element in electrical engineering. |
Ultra-Fast Quantum-Dot Information StorageThe information-storage market is dominated by two main types: Flash memory, used in memory sticks and cell phones, and dynamic random access memory (DRAM), which is the main memory in a personal computer. Both types have ... |
 Toshiba develops the world's fastest speed embedded DRAM technologyToshiba Corporation today announced that it has realized the world's fastest circuit technology for embedded DRAM for System LSI, achieving a speed of 833MHz at 32Mb density. The technology will be applied ... |
Intel, STMicroelectronics Deliver Industry's First Phase Change Memory PrototypesIntel Corporation and STMicroelectronics reached a key industry milestone today as they began shipping prototype samples of a future product using a new, innovative memory technology called Phase Change Memory (PCM). The ... |
 Toshiba Launches High Performance Solid State Drives With MLC NAND Flash MemoryToshiba Corp. today announced their entry into the emerging market for NAND-flash-based solid-state drives (SSDs) with a series of products featuring multi-level cell (MLC) NAND flash memory. |
 Remembering the futureAs electronics designers cram more and more components onto each chip, current technologies for making random-access memory (RAM) are running out of room. European researchers have a strong position in a new ... |
Elpida Develops a 65nm-Process 1-Gigabit DDR2 SDRAM, World's Smallest ChipElpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), announced today that it has completed development of a 1-Gigabit DDR2 SDRAM based on new 65nm process technology. The 65nm process allows ... |
 Transcend Introduces New aXeRam Overlocking Memory KitThe new DDR aXeRam Overlocking Memory Kit has received favorable comments by system builders and enthusiasts. The new product provides low voltage stability, and low CAS latency. This high performance memory ... |
Elpida Introduces the World's Fastest DRAM Based on the Rambus XDR Memory ArchitectureElpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM) and Rambus Inc., one of the world's premier technology licensing companies specializing in high-speed chip architectures, today introduced ... |
 Toshiba to demonstrate prototype of new 'SpursEngine' processorToshiba Corporation today announced development of the "SpursEngine", a high-performance stream processor integrating Synergistic Processing Element (SPE) cores derived from the Cell Broadband Engine (Cell/B.E.). ... |
Nanoscale computer memory retrieves data 1,000 times fasterScientists from the University of Pennsylvania have developed nanowires capable of storing computer data for 100,000 years and retrieving that data a thousand times faster than existing portable memory devices such as Flash ... |
 Researchers improve ability to write and store information on electronic devicesNew research led by the U.S. Department of Energy's Argonne National Laboratory physicist Matthias Bode provides a more thorough understanding of new mechanisms, which makes it possible to switch a magnetic ... |
 Samsung Opens Largest Wafer Plant In Austin, TexasSamsung Electronics announced the opening of the largest 300mm NAND flash memory wafer plant in Austin, Texas on Thursday, in ceremonies that included Texas Governor Rick Perry and Samsung Electronics Vice ... |
Hynix joins IMEC's (sub-)32nm CMOS research platformHynix Semiconductor has entered into a strategic partnership with IMEC, Europe’s leading independent nanoelectronics research center, to perform research and development for the (sub)-32nm memory process generations. |
