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IMEC increases performance of high-k metal gate planar CMOS and FinFETs

Dec 11, 2007 | User rating: 4.3 / 5 after 3 vote(s) | pda version

At today’s IEEE International Electron Devices Meeting, IMEC reports significant progress in improving the performance of planar CMOS using hafnium-based high-k dielectrics and tantalum-carbide metal gates ...


Elpida Develops a 65nm-Process 1-Gigabit DDR2 SDRAM, World's Smallest Chip

Nov 07, 2007 | User rating: 4 / 5 after 5 vote(s) | pda version

Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), announced today that it has completed development of a 1-Gigabit DDR2 SDRAM based on new 65nm process technology. The 65nm process allows ...


Elpida Introduces the World's Fastest DRAM Based on the Rambus XDR Memory Architecture

Oct 05, 2007 | User rating: 5 / 5 after 3 vote(s) | pda version

Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM) and Rambus Inc., one of the world's premier technology licensing companies specializing in high-speed chip architectures, today introduced ...


IMEC advancing state-of-the-art in FinFETs

Jun 13, 2007 | User rating: 5 / 5 after 2 vote(s) | pda version

At this week’s VLSI Symposium, IMEC presents significant progress in the manufacturability, circuit performance and reliability of FinFETs. The results advance FinFET process technology towards being a candidate ...


Hynix joins IMEC's (sub-)32nm CMOS research platform

May 24, 2007 | User rating: 3.3 / 5 after 3 vote(s) | pda version

Hynix Semiconductor has entered into a strategic partnership with IMEC, Europe’s leading independent nanoelectronics research center, to perform research and development for the (sub)-32nm memory process generations.


Elpida Verifies the Physical Phenomena of Defect Repair Technology on a Microscopic Level

Apr 14, 2006 | pda version

Elpida Memory announced recently that it has successfully developed defect repair technology that leads to dramatic improvement of data retention, and has also identified the physical phenomena that dominate DRAM retention ...


Elpida Intros New 1 Gigabit DDR2 SDRAMs

Mar 07, 2006 | User rating: 4.5 / 5 after 2 vote(s) | pda version

Elpida Memory today announced the availability of its second-generation 1 Gigabit DDR2 SDRAMs and six memory modules based on the new devices.


Korean DRAM finds itself shut out of Japan

Jan 27, 2006 | User rating: 3.4 / 5 after 9 vote(s) | pda version

Japan may claim that the countervailing duty it slaps against Korean DRAM chip maker Hynix from today is just a protest against unfair trade practices and to curb dumping, but there's a widespread belief that the country ...


Elpida Memory Ships Samples of 2 Gigabit DDR2 SDRAM using 80 nm Process Technology

Dec 19, 2005 | User rating: 4.5 / 5 after 2 vote(s) | pda version

Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced the shipment of 80 nm-based 2 Gigabit DDR2 SDRAM samples. These samples are among the first 80 nm-based devices in the ...


A 20-year old mystery mechanism influencing DRAM cell retention time fluctuation clarified

Dec 08, 2005 | User rating: 4.5 / 5 after 4 vote(s) | pda version

Hitachi, Ltd., in cooperation with Elpida Memory announced today that they have identified that the leakage current fluctuation of the p-n junction*1) is the primary factor influencing the charge retention time fluctuation ...


Elpida Memory's 512 Megabit Mobile RAM Device Fits in Smaller Package for 3G Phones

Jul 13, 2005 | pda version

90 nm Process Technology Enables Smaller Die Size, Easier Implementation in Multi-Chip-Package and System-in-Package Designs

Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random Access ...


0.4-V DRAM array technology using twin cells for next generation mobile devices

Jun 27, 2005 | pda version

Enabling the longer retention time and fast read/write operation under low voltage condition

Hitachi, Ltd. in cooperation with Elpida Memory, Inc., have proposed a new DRAM ...


Elpida Memory Develops 2 Gigabit DDR2 SDRAM Using 80 nm Process Technology for Servers

Jun 23, 2005 | pda version

Industry's Highest Density DRAM Product Will Use the Smallest, Most Advanced Process Technology for High Volume Production

Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random Access ...


Elpida's 1.8 Volt, 256Mb Digital Consumer DRAM Delivers Lower Power Consumption for Handheld Applications

Jun 02, 2005 | pda version

Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random Access Memory (DRAM), announced a new 1.8 Volt, 256 Megabit SDRAM device suitable for ...


Elpida's 512 Megabyte DDR2 SO-DIMMs Offer Low-Power Operation, Improved Thermal Performance for Notebooks

May 24, 2005 | User rating: 1 / 5 after 2 vote(s) | pda version

Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced its 512 Megabyte DDR2 Small-Outline Dual In-line Memory Modules (SO-DIMMs). The modules utilize next-generation ...


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