IMEC successfully concludes installation of front-end-of-line (FEOL) tools with processing of first pathfinder lots. Strategic agreements with leading equipment manufacturers Applied Materials, Inc., ASM International and ...
Together with its CMOS core partners, IMEC will announce several research breakthroughs on new gate-stack technologies and multiple-gate FET (MuGFET) devices at the 2005 Symposium on VLSI Technology. A combination of advances ...
SEMATECH today announced its Top Technical Challenges for 2006, continuing to underscore advanced gate stack, 193 nm immersion and EUV lithography, mask infrastructure, and low-k dielectrics with process compatibility. Consortium ...
In an effort to accelerate the development of new-generation transistors, Soitec, today announced its participation as the SOI substrate supplier in a development program led by ATDF -- Advanced Technology Development Facility ...
At today’s IEEE International Electron Devices Meeting in San Francisco, IMEC, Europe’s largest independent nanoeelctronics and nanotechnology research center, announced that it had achieved the smallest triple-gate device ...
ATDF, Inc. with assistance from HPL Technologies, Inc. of San Jose, has successfully demonstrated process capability at the 45 nm technology node for a multi-gate field effect transistor (MuGFET), an advanced semiconductor ...
