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Advanced engineered substrates boost chip performance

Feb 21, 2008 | User rating: 3 / 5 after 2 vote(s) | pda version

A single platform that combines the benefits of strained silicon and silicon-on-insulator technologies hopes to offer much improved performance for future chip generations.


IBM Alliances Announce Advancement in High-K/Metal Gate Technology

Dec 14, 2007 | User rating: 4.6 / 5 after 33 vote(s) | pda version

IBM and its joint development partners -- AMD, Chartered Semiconductor Manufacturing, Freescale, Infineon, and Samsung -- announced an innovative approach to speed the implementation of a breakthrough material ...


Bird flu symptoms found in Malaysian pair

Jun 11, 2007 | pda version

Health officials in Malaysia are taking all precautions regarding a 31-year-old man and a teenager who recently showed symptoms of the bird flu virus.


UMC, ARM Partner to Deliver Comprehensive SOI Solutions for 65nm Technology

Jun 04, 2007 | User rating: 3.3 / 5 after 4 vote(s) | pda version

UMC and ARM today announced that a test chip built with ARM SOI (Silicon On Insulator) libraries was taped-out successfully on UMC's 65-nanometer (nm) SOI process. The test chip consists of a set of ARM physical IP that uses ...


IBM Reveals Breakthrough eDRAM Memory Technology

Feb 14, 2007 | User rating: 4.5 / 5 after 67 vote(s) | pda version

In papers presented at the International Solid State Circuits Conference, IBM revealed a first-of-its-kind, on-chip memory technology that features the fastest access times ever recorded in eDRAM (Embedded ...


Renesas, Matsushita Develop Technique for Stablizing Operation of 45nm On-Chip SRAM

Feb 13, 2007 | User rating: 4 / 5 after 1 vote(s) | pda version

Renesas Technology and Matsushita Electric Industrial today announced the development of a technique that achieves stable operation with 45nm process generation bulk CMOS for SRAM (Static Random Access Memory) ...


AMO Manufactures First Graphene Transistors

Feb 08, 2007 | User rating: 4.1 / 5 after 17 vote(s) | pda version

In the scope of his innovative project ALEGRA the AMO nanoelectronics group of Dr. Max Lemme was able to manufacture top-gated transistor-like field-effect devices from monolayer graphene.


Light-emitting transistor uses light to transfer an electrical signal

Nov 01, 2006 | User rating: 4.5 / 5 after 105 vote(s) | pda version

In one of the early discoveries of the current "silicon electrophotonics era," scientists from Hitachi, Ltd. in Tokyo have built a light-emitting transistor (LET) that transfers, detects and controls an electrical ...


SiGen Announces Breakthrough in Direct Silicon Bond Substrate Technology

Apr 18, 2006 | pda version

Silicon Genesis Corporation (SiGen) announced today that it has developed the process modifications to manufacture direct silicon bonded substrates. Direct silicon bond (DSB) substrates are fabricated by bonding and electrically ...


New technique provides the first full view of the far side of the sun

Mar 13, 2006 | User rating: 4.8 / 5 after 11 vote(s) | pda version

The hidden face of the sun is fully visible for the first time, thanks to a new technique developed at Stanford University.


World's first MOSFETs with epitaxial Gd2O3

Feb 03, 2006 | User rating: 5 / 5 after 2 vote(s) | pda version

Researchers at AMICA and Technical University of Darmstadt have successfully fabricated the world's first MOSFETs on ultra-thin-body silicon-on-insulator (SOI) material and bulk silicon with a crystalline gadolinium oxide ...


AMD, IBM Unveil New, Higher Performance, More Power Efficient 65nm Process Technologies

Dec 06, 2005 | User rating: 4.7 / 5 after 3 vote(s) | pda version

In papers presented at the International Electron Devices Meeting (IEDM) in Washington, D.C., IBM and AMD today detailed their progress in bringing new, advanced semiconductor process technologies and materials to the 65 ...


NEC's Breakthrough to Enhance Functionality of Sub-10nm Transistors

Dec 05, 2005 | User rating: 5 / 5 after 3 vote(s) | pda version

NEC today announced the development of new breakthrough device technology for low-power, high performance system LSI. Based on the ultimate scaling of conventional bulk planar MOSFETs, the new technology is capable of improving ...


World's first SOI MOSFET with crystalline Gd2O3

Nov 28, 2005 | User rating: 3.5 / 5 after 2 vote(s) | pda version

Researchers at AMICA have successfully fabricated the world's first MOSFETs on ultra-thin-body silicon-on-insulator (SOI) material with a crystalline gadolinium oxide (Gd2O3) gate dielectric.


IBM Scientists Harness 'Slow Light' for Optical Communications

Nov 03, 2005 | User rating: 3.9 / 5 after 39 vote(s) | pda version

Researchers at IBM have created a tiny device that represents a big advance toward the eventual use of light in place of electricity in the connection of electronic components, potentially leading to vast ...


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