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Intel, Samsung, TSMC Reach Agreement for 450mm Wafer Manufacturing Transition

May 06, 2008 | User rating: 3.4 / 5 after 10 vote(s) | pda version

Intel Corp., Samsung Electronics and TSMC today announced they have reached agreement on the need for industry-wide collaboration to target a transition to larger, 450mm-sized wafers starting in 2012. The transition to larger ...


Engineers demonstrate nanotube wires operating at speed of commercial chips

Jan 30, 2008 | User rating: 4.1 / 5 after 20 vote(s) | pda version

Integrated circuits, such as the silicon chips inside all modern electronics, are only as good as their wiring, but copper conduits are approaching physical performance limitations as they get thinner.


AMD Delivers ATI Radeon HD 3870 X2 GPU

Jan 28, 2008 | User rating: 4.4 / 5 after 17 vote(s) | pda version

AMD today announced the immediate availability of the ATI Radeon HD 3870 X2 graphics processor, expanding the visual boundaries of PC entertainment well beyond the 1080P High Definition (HD) threshold. The ...


IMEC increases performance of high-k metal gate planar CMOS and FinFETs

Dec 11, 2007 | User rating: 4.3 / 5 after 3 vote(s) | pda version

At today’s IEEE International Electron Devices Meeting, IMEC reports significant progress in improving the performance of planar CMOS using hafnium-based high-k dielectrics and tantalum-carbide metal gates ...


AMD Unleashes Enthusiast Gaming Performance for the Masses with ATI Radeon HD 3800 Series

Nov 15, 2007 | User rating: 4.8 / 5 after 9 vote(s) | pda version

AMD today announced the introduction and immediate availability of the ATI Radeon HD 3800 Series of graphics processing units (GPU). As the world’s first series of graphics processors to deliver Microsoft’s DirectX 10.1 support, ...


IMEC advancing state-of-the-art in FinFETs

Jun 13, 2007 | User rating: 5 / 5 after 2 vote(s) | pda version

At this week’s VLSI Symposium, IMEC presents significant progress in the manufacturability, circuit performance and reliability of FinFETs. The results advance FinFET process technology towards being a candidate ...


Hynix joins IMEC's (sub-)32nm CMOS research platform

May 24, 2007 | User rating: 3.3 / 5 after 3 vote(s) | pda version

Hynix Semiconductor has entered into a strategic partnership with IMEC, Europe’s leading independent nanoelectronics research center, to perform research and development for the (sub)-32nm memory process generations.


Memjet Customers, Roadmap Start Taking Shape

Mar 27, 2007 | User rating: 4.4 / 5 after 21 vote(s) | pda version

PC OEMs and camera makers could be among the customers for Memjet's revolutionary inkjet printers that were first disclosed last week. Meanwhile, the company has already ...


Stealth Inkjet Printer Startup Could Rock Industry

Mar 23, 2007 | User rating: 4.7 / 5 after 112 vote(s) | pda version

Silverbrook Research has developed the Memjet, a nanotech-fueled, consumer inkjet printer that can print sixty pages a minute for under $200. And it works.


TSMC Manufactures First Functional 65nm Embedded DRAM Device

Mar 06, 2007 | User rating: 3.5 / 5 after 2 vote(s) | pda version

Taiwan Semiconductor Manufacturing Company, Ltd. today announced the foundry industry’s first functional 65nm embedded DRAM customer product. The product contains millions of DRAM bits and was silicon verified first time ...


IMEC demonstrates viability of laser anneal for the 32nm node

Dec 11, 2006 | User rating: 3 / 5 after 5 vote(s) | pda version

At today’s IEEE International Electron Devices Meeting, IMEC reports that laser anneal is a promising option for further transistor scaling to the 32nm node. By device demonstration, IMEC shows that laser anneal allows to ...


Applied Materials, IMEC Team to Develop Innovative 32nm, 22nm Interconnects

Jan 24, 2006 | User rating: 2.8 / 5 after 4 vote(s) | pda version

Applied Materials and IMEC, Europe's leading independent nanoelectronics and nanotechnology research center, announced today a significant joint effort to develop 32nm and 22nm-node copper/low k interconnect ...


IMEC reports CMOS integration of Hf-based dielectrics with Ni FUSI gates

Dec 07, 2005 | User rating: 3 / 5 after 2 vote(s) | pda version

At today’s IEEE International Electron Devices Meeting, IMEC announces a simple CMOS integration scheme of a NiSi gate for NMOS and a Ni2Si gate for PMOS on HfSiON with simultaneous 2-step silicidation. The potential of this ...


Improved Materials Dominate Chip Evolution

Nov 03, 2005 | User rating: 3.8 / 5 after 4 vote(s) | pda version

Material innovation has replaced scaling as the primary source of performance and feature improvements in leading-edge CMOS semiconductors, IBM technologist Paul Farrar, Jr. told attendees at the ISMI Symposium on Manufacturing ...


Kodak Announces 39-megapixel CCD Image Sensor

Oct 21, 2005 | User rating: 3.8 / 5 after 12 vote(s) | pda version

Eastman Kodak Company has set the quality standard for digital imaging with new high-resolution image sensors that allow commercial, studio, and other professional photographers to capture digital images with the most life-like ...


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