The power of future quantum computers stems from the use of qubits, or quantum bits, which do not have to be either 0 or 1, but can also be 0 and 1 at the same time. It is not yet clear on which technology these qubits in ...
At this week's IEEE IEDM conference, nano-electronics research center imec demonstrates record enhancement of novel InGaAs Gate-All-Around (GAA) channel devices integrated on 300mm Silicon and explores emerging tunnel devices ...
An alliance led by IBM Research today announced that it has produced the semiconductor industry's first 7nm (nanometer) node test chips with functioning transistors. The breakthrough, accomplished in partnership with GLOBALFOUNDRIES ...
The return of the SpaceX Dragon brings with it plant samples, data that may impact your facial cream composition and validation of a new way of creating on Earth crystals that are used in our daily electronic devices. This ...
Fujitsu Laboratories today announced that it has produced a transceiver chip for millimeter-wave radar in a complementary metal-oxide-semiconductor (CMOS) implementation, which is a semiconductor process that enables costs ...
(Phys.org) —The ubiquitous classical digital computer encodes data in bits (a portmanteau of binary and digits) in either a 0 or 1 state. On the other hand, while a quantum computer also uses 0/1 data representation, these ...
IBM today introduced the fifth generation of semiconductor technology specialized for high performance communications. The company's latest silicon-germanium (SiGe) chip-making process is designed to enable ever-increasing ...
(Phys.org) —A research collaboration consisting of IHP-Innovations for High Performance Microelectronics in Germany and the Georgia Institute of Technology has demonstrated the world's fastest silicon-based device to date. ...
Two teams of DARPA performers have achieved world record power output levels using silicon-based technologies for millimeter-wave power amplifiers. RF power amplifiers are used in communications and sensor systems to boost ...
At this week's IEEE International Electron Devices Meeting (IEDM 2012), imec addressed key challenges of scaling beyond silicon-channel finFETs. Imec showed that channel mobility can be boosted by growing non-Si channels ...
