Search results for non-volatile flash memory

General Physics Nov 6, 2017

Ultrafast magnetic reversal points the way toward speedy, low-power computer memory

Researchers at UC Berkeley and UC Riverside have developed a new, ultrafast method for electrically controlling magnetism in certain metals, a breakthrough that could lead to greatly increased performance and more energy-efficient ...

Nanophysics Jul 12, 2017

Oxygen vacancy supported memory

A non-volatile memory keeping its digital information without power and working at the same time at the ultrahigh speed of today's dynamic random access memory (DRAM) – that is the dream of materials scientists of TU Darmstadt.

Electronics & Semiconductors Jun 7, 2017

Breakthrough in CMOS-compatible ferroelectric memory

Imec, the world-leading research and innovation hub in nanoelectronics and digital technology, announced today at the 2017 Symposia on VLSI Technology and Circuits the world's first demonstration of a vertically stacked ferroelectric ...

Space Exploration Apr 20, 2017

NASA's Mars rover Opportunity leaves 'Tribulation'

NASA's senior Mars rover, Opportunity, is departing "Cape Tribulation," a crater-rim segment it has explored since late 2014, southbound for its next destination, "Perseverance Valley."

Electronics & Semiconductors Oct 27, 2016

Fujitsu Semiconductor launches world's largest density 4 Mbit ReRAM product for mass production

Fujitsu Semiconductor Limited today announced the launch of the 4 Mbit ReRAM MB85AS4MT, the world's largest density mass-produced ReRAM product. This is the first ReRAM product to be jointly developed with Panasonic Semiconductor ...

Space Exploration Oct 7, 2016

Opportunity rover to explore Mars gully

NASA's Opportunity Mars rover will drive down a gully carved long ago by a fluid that might have been water, according to the latest plans for the 12-year-old mission. No Mars rover has done that before.

Nanophysics Jun 15, 2016

Experiments demonstrate how memristors work

In experiments at two Department of Energy national labs – SLAC National Accelerator Laboratory and Lawrence Berkeley National Laboratory – scientists at Hewlett Packard Enterprise (HPE) have experimentally confirmed ...

Electronics & Semiconductors May 17, 2016

IBM scientists achieve storage memory breakthrough

For the first time, scientists at IBM Research have demonstrated reliably storing 3 bits of data per cell using a relatively new memory technology known as phase-change memory (PCM).

Condensed Matter Apr 14, 2016

Scientists grow a material based on hafnium oxide for a new type of non-volatile memory

Scientists from MIPT have succeeded in growing ultra-thin (2.5-nanometre) ferroelectric films based on hafnium oxide that could potentially be used to develop non-volatile memory elements called ferroelectric tunnel junctions. ...

Electronics & Semiconductors Mar 11, 2016

Configurable analog chip computes with 1,000 times less power than digital

Researchers have built and demonstrated a novel configurable computing device that uses a thousand times less electrical power – and can be built up to a hundred times smaller – than comparable digital floating-gate configurable ...

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