Search results for MOSFET
Toshiba develops essential technology for spintronics-based MOS field-effect transistor
Dec 09, 2009 |
4.5 / 5 (11) |
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(PhysOrg.com) -- Toshiba Corporation today announced that it has developed MOSFET cell based on spin transport electronics, or spintronics, an advanced semiconductor technology that makes use of the spin and ...
Researchers Induce Superconductivity in an Insulator
Nov 24, 2008 |
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(PhysOrg.com) -- To continue to improve semiconductor devices, such as transistors, which form the backbone of the consumer electronics industry, researchers need to be able to control the movement and density of the electric ...
Smaller, cheaper cell phones possible
Jul 31, 2009 |
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(PhysOrg.com) -- Ph.D. candidate Sataporn Pornpromlikit played a critical role in research at UC San Diego that made a big impact at a recent conference, and might provide manufacturers with the means for making cell phones ...
Rensselaer student invents alternative to silicon chip
May 13, 2008 |
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Even before Weixiao Huang received his doctorate from Rensselaer Polytechnic Institute, his new transistor captured the attention of some of the biggest American and Japanese automobile companies. The 2008 ...
New design for transistors powered by single electrons
Physics /
Feb 02, 2006 |
4.4 / 5 (27) |
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Scientists have demonstrated the first reproducible, controllable silicon transistors that are turned on and off by the motion of individual electrons. The experimental devices, designed and fabricated at NTT ...
Researchers shine light on atomic transistor
Nov 22, 2006 |
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Researchers from TU Delft and the FOM Foundation (Netherlands) have successfully measured transport through a single atom in a transistor. This research offers new insights into the behaviour of so-called dopant ...
NXP announces world's smallest high-performance MOSFET
Feb 25, 2008 |
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NXP Semiconductors, the independent company founded by Philips, today announced a new range of small signal MOSFET devices housed in one of the world’s smallest packages, the SOT883. Boasting an ultra-small 1.0 x 0.6 mm footprint, ...
Sematech to Investigate Alternate Channel Materials for Advanced Microchips
Mar 09, 2006 |
3.3 / 5 (3) |
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Pushed by the scaling limits of silicon-based devices, Sematech engineers have launched a project to investigate alternative materials to Si in MOSFET channels, the critical pathways that allow electrical signals to flow ...
SEMATECH and NIST Collaborate on Chemical Analysis of Advanced Gate Dielectrics
May 30, 2007 |
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Nitrogen incorporation in thin HfO2/SiO2 film systems representative of high-k gate dielectric layers in advanced metal-oxide semiconductor field-effect transistors (MOSFETs) has been investigated by synch ...
Freescale creates first commercially viable GaAs MOSFET device
Jan 30, 2006 |
4.2 / 5 (15) |
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Freescale Semiconductor has developed the industry's first device that combines the high performance of gallium arsenide (GaAs) semiconductor compounds with the advantages of traditional metal oxide semiconductor field effect ...
World's first SOI MOSFET with crystalline Gd2O3
Physics /
Nov 28, 2005 |
3.3 / 5 (3) |
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Researchers at AMICA have successfully fabricated the world's first MOSFETs on ultra-thin-body silicon-on-insulator (SOI) material with a crystalline gadolinium oxide (Gd2O3) gate dielectric.
Penn-State Philips CMOS transistor model adopted as industry-wide standard for future nanometer chip design
Dec 20, 2005 |
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Philips and the Pennsylvania State University today announced that their jointly developed PSP (Penn State Philips) complementary metal-oxide semiconductor (CMOS) transistor model has been selected by the Compact ...
UMC Develops Ultimate Spacer Process to Enhance MOSFET Device Performance for 65nm and Beyond
Dec 07, 2005 |
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UMC today announced that its Central Research and Development Division (CRD) has successfully developed an Ultimate Spacer Process (USP) technology that simultaneously enhances NMOS and PMOS device performance. Devices fabricated ...
Sensors, a smart dose of medicine for cancer treatment
Nov 02, 2005 |
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New sensor systems being developed will help treat cancer and improve the accuracy and reliability of existing radiation treatments. They should help improve patient care and outcomes. The results will go straight to commercialisation ...
NEC Develops Highly-Reliable CMOSFET with Phase Controlled NiSi (NFET) & Ni3Si (PFET) Gate Electrode
Jun 16, 2005 |
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NEC Corporation ("NEC") today announced the development of a transistor featuring a new gate stack structure using a hafnium ("Hf")-based, high-k dielectric and a metal gate electrode, which simultaneously realize significant ...
