Search results for SRAM:
Moore's Law Marches on at Intel
Sep 22, 2009 |
4.3 / 5 (30) |
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Intel President and CEO Paul Otellini today displayed a silicon wafer containing the world's first working chips built on 22nm process technology. The 22nm test circuits include both SRAM memory as well as ...
IBM Alliance Announces Availability of Advanced 28-Nanometer, Low-Power Semiconductor Technology
Apr 20, 2009 |
5 / 5 (4) |
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IBM, Chartered Semiconductor Manufacturing, GLOBALFOUNDRIES, Infineon Technologies, Samsung Electronics, and STMicroelectronics have defined and are jointly developing a 28-nanometer, high-k metal gate (HKMG), low-power bulk ...
NEC Develops a Three-Dimensional Chip-Stacked Flexible Memory
Feb 10, 2009 |
2.3 / 5 (3) |
0
NEC Corporation announced today the development of chip-stacked flexible memory, which can be used to achieve a new system-on-chip (SoC) architecture. The new SoC's architecture consists of separate logic ...
Researchers Build World's Smallest SRAM Memory Cell
Aug 18, 2008 |
4.4 / 5 (24) |
3
(PhysOrg.com) -- IBM and its development partners -- AMD, Freescale, STMicroelectronics, Toshiba and the College of Nanoscale Science and Engineering (CNSE) -- today announced the first working static random access memory ...
TSMC Achieves 28nm SRAM Yield Breakthrough
Aug 24, 2009 |
5 / 5 (2) |
0
Taiwan Semiconductor Manufacturing Company has become the first foundry not only to achieve 28nm functional 64Mb SRAM yield, but also to achieve it across all three 28nm nodes.
Toshiba, IBM, AMD Develop World's Smallest FinFET SRAM Cell with High-k/Metal Gate
Dec 17, 2008 |
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Toshiba, IBM, and AMD today announced that they have together developed a Static Random Access Memory (SRAM) cell that has an area of only 0.128 square micrometers (μm2), the world’s smallest functional SRAM cell that ...
SKorea clears chipmakers of cartel charges
Apr 20, 2009 |
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South Korea's anti-trust watchdog said Monday it has found no evidence that leading chipmakers in South Korea and other countries colluded to fix prices.
Novel memory device is set to rival transistor-switched silicon-based memory
Jun 25, 2008 |
4.6 / 5 (25) |
2
Working with an international group of researchers, Professor Gehan Amaratunga has produced a novel memory device which is set to rival transistor-switched silicon-based memory.
IBM Alliances Announce Advancement in High-K/Metal Gate Technology
Dec 14, 2007 |
4.6 / 5 (34) |
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IBM and its joint development partners -- AMD, Chartered Semiconductor Manufacturing, Freescale, Infineon, and Samsung -- announced an innovative approach to speed the implementation of a breakthrough material ...
Miniaturizing memory: Taking data storage to the molecular level
Nov 11, 2008 |
3.9 / 5 (9) |
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Computers are getting smaller and smaller. And as hand-held devices — from mobile phones and cameras to music players and laptops — get more powerful, the race is on to develop memory formats that can satisfy the ever-growing ...
Toshiba develops cost-effective 32nm CMOS platform technology by advanced single exposure lithography
Dec 18, 2008 |
5 / 5 (1) |
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Toshiba Corporation today announced a cost-effective 32nm CMOS platform technology that offers higher density and improved performance while halving the cost per function from 45nm technology.
IBM Extends Moore's Law to the Third Dimension
Apr 12, 2007 |
4.7 / 5 (178) |
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IBM today announced a breakthrough chip-stacking technology in a manufacturing environment that paves the way for three-dimensional chips that will extend Moore’s Law beyond its expected limits. The technology ...
UMC Announces Industry's First 28nm SRAMs
Oct 27, 2008 |
4.3 / 5 (3) |
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UMC, a leading global semiconductor foundry, today announced that it has manufactured the foundry industry's first fully functional 28nm SRAM chips. The chips are based on UMC's independently developed low-leakage (LL) process ...
IBM Reveals Breakthrough eDRAM Memory Technology
Feb 14, 2007 |
4.5 / 5 (67) |
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In papers presented at the International Solid State Circuits Conference, IBM revealed a first-of-its-kind, on-chip memory technology that features the fastest access times ever recorded in eDRAM (Embedded ...
IMEC reports major progress in EUV
Jul 14, 2008 |
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1
IMEC reports functional 0.186µm2 32nm SRAM cells made with FinFETs from which the contact layer was successfully printed using ASML’s full field extreme ultraviolet (EUV) Alpha Demo Tool (ADT). Applied Materials, ...
