Search results for field effect transistor:
SKoreans demonstrate spin-injected field effect transistor
Sep 18, 2009 |
5 / 5 (6) |
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South Korean scientists said Friday they had demonstrated a spin-injected field effect transistor in a high-mobility InAs heterostructure.
Michigan Tech Team Models Molecular Transistor
Aug 13, 2009 |
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(PhysOrg.com) -- Electronic gadgetry gets tinier and more powerful all the time, but at some point, the transistors and myriad other component parts will get so little they won't work. That's because when ...
AMO Manufactures First Graphene Transistors
Nanotechnology / Condensed Matter
Feb 08, 2007 |
4.1 / 5 (18) |
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In the scope of his innovative project ALEGRA the AMO nanoelectronics group of Dr. Max Lemme was able to manufacture top-gated transistor-like field-effect devices from monolayer graphene.
S.Korea develop the smallest transistors
Mar 14, 2006 |
4.1 / 5 (13) |
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South Korean scientists and the national institute of technology have developed a 3-nanometer-wide transistor, the smallest of its kind in the world.
Portuguese team makes first paper based transistor
Jul 22, 2008 |
4.6 / 5 (61) |
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(PhysOrg.com) -- Elvira Fortunato and colleagues from the Centro de Investigação de Materiais (Cenimat/I3N), at Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, made the first Field Effect ...
Scientists Develop World's Fastest Graphene Transistor
Dec 19, 2008 |
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(PhysOrg.com) -- IBM Researchers today announced that they demonstrated the operation of graphene field-effect transistors at GHz frequencies, and achieved the highest frequencies reported so far using this ...
Could a paper transistor offer an alternative to silicon?
Sep 22, 2009 |
4.5 / 5 (15) |
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(PhysOrg.com) -- As technology advances, scientists look for ways to enhance electronic applications and devices. Indeed, electronics are getting smaller and more diverse. And as this happens, there is an increased requirement ...
Rensselaer student invents alternative to silicon chip
May 13, 2008 |
4.6 / 5 (105) |
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Even before Weixiao Huang received his doctorate from Rensselaer Polytechnic Institute, his new transistor captured the attention of some of the biggest American and Japanese automobile companies. The 2008 ...
Carbon-Nanotube Memory that Really Competes
Jan 26, 2009 |
4.2 / 5 (21) |
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(PhysOrg.com) -- Researchers in Finland have created a form of carbon-nanotube based information storage that is comparable in speed to a type of memory commonly used in memory cards and USB "jump" drives.
GaAs self-assembled nanowires could make chips smaller and faster
Apr 20, 2009 |
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(PhysOrg.com) -- Researchers at the University of Illinois have found a new way to make transistors smaller and faster. The technique uses self-assembled, self-aligned, and defect-free nanowire channels made ...
Flexible OLED display one-step closer with organic light emitting material direct writing
Oct 27, 2008 |
4.4 / 5 (25) |
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(PhysOrg.com) -- One of the more interesting methods of pattern transfer available for a number of applications right now is Laser Induced Forward Transfer (LIFT). However, when working with organic material, there are some ...
Creating a memory device out of paper
Nov 26, 2008 |
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(PhysOrg.com) -- As technology continues to shrink, and as memory needs become more demanding, the industry dealing with microelectronics requires devices that are cost-efficient and lightweight. And, while organic materials ...
Nano-designed transistors with disordered materials, but high performance
May 02, 2008 |
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The Holy Grail for transistor designers has been the requirement to be able to get high performance at reduced costs over very large substrate areas. Transistors on cheap and flexible substrates like glass and plastics are ...
Mysterious charge transport in self-assembled monolayer transistors unraveled
Aug 11, 2009 |
3 / 5 (3) |
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An international team of researchers from the Netherlands, Russia and Austria discovered that monolayer coverage and channel length set the mobility in self-assembled monolayer field-effect transistors (SAMFETs). ...
Toshiba, IBM, AMD Develop World's Smallest FinFET SRAM Cell with High-k/Metal Gate
Dec 17, 2008 |
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Toshiba, IBM, and AMD today announced that they have together developed a Static Random Access Memory (SRAM) cell that has an area of only 0.128 square micrometers (μm2), the world’s smallest functional SRAM cell that ...
