Search results for MOSFET
Rensselaer student invents alternative to silicon chip
May 13, 2008 |
4.6 / 5 (105) |
13
Even before Weixiao Huang received his doctorate from Rensselaer Polytechnic Institute, his new transistor captured the attention of some of the biggest American and Japanese automobile companies. The 2008 ...
Researchers Induce Superconductivity in an Insulator
Nov 24, 2008 |
4.5 / 5 (36) |
5
(PhysOrg.com) -- To continue to improve semiconductor devices, such as transistors, which form the backbone of the consumer electronics industry, researchers need to be able to control the movement and density of the electric ...
Researchers shine light on atomic transistor
Nov 22, 2006 |
4.7 / 5 (31) |
0
Researchers from TU Delft and the FOM Foundation (Netherlands) have successfully measured transport through a single atom in a transistor. This research offers new insights into the behaviour of so-called dopant ...
New design for transistors powered by single electrons
Physics /
Feb 02, 2006 |
4.4 / 5 (27) |
0
Scientists have demonstrated the first reproducible, controllable silicon transistors that are turned on and off by the motion of individual electrons. The experimental devices, designed and fabricated at NTT ...
Digital Quantum Battery Could Boost Energy Density Tenfold
Dec 22, 2009 |
5 / 5 (23) |
9
(PhysOrg.com) -- Physicists theorize that quantum phenomena could provide a major boost to batteries, with the potential to increase energy density up to 10 times that of lithium ion batteries. According to ...
Freescale creates first commercially viable GaAs MOSFET device
Jan 30, 2006 |
4.2 / 5 (15) |
0
Freescale Semiconductor has developed the industry's first device that combines the high performance of gallium arsenide (GaAs) semiconductor compounds with the advantages of traditional metal oxide semiconductor field effect ...
Toshiba develops essential technology for spintronics-based MOS field-effect transistor
Dec 09, 2009 |
4.5 / 5 (11) |
1
(PhysOrg.com) -- Toshiba Corporation today announced that it has developed MOSFET cell based on spin transport electronics, or spintronics, an advanced semiconductor technology that makes use of the spin and ...
Penn-State Philips CMOS transistor model adopted as industry-wide standard for future nanometer chip design
Dec 20, 2005 |
3.5 / 5 (8) |
0
Philips and the Pennsylvania State University today announced that their jointly developed PSP (Penn State Philips) complementary metal-oxide semiconductor (CMOS) transistor model has been selected by the Compact ...
Infineon Demonstrated New Tunneling FET Enabling Scalable Ultra-Low Voltage Processes in Standard Silicon Technology
Dec 15, 2004 |
4.5 / 5 (4) |
0
Infineon Demonstrated New Tunneling Field Effect Transistors Enabling Scalable Ultra-Low Voltage Processes in Standard Silicon Technology At the 2004 IEEE International Electron Devices Meeting (IEDM) in San Francisco (De ...
NXP announces world's smallest high-performance MOSFET
Feb 25, 2008 |
4 / 5 (4) |
0
NXP Semiconductors, the independent company founded by Philips, today announced a new range of small signal MOSFET devices housed in one of the world’s smallest packages, the SOT883. Boasting an ultra-small 1.0 x 0.6 mm footprint, ...
New mathematical model better describes transistor behavior
May 11, 2005 |
5 / 5 (3) |
0
Penn State and Philips researchers have merged the best features of their respective approaches to produce a new mathematical model that describes the behavior of the MOS transistor in a wide class of integrated circuits ...
World's first SOI MOSFET with crystalline Gd2O3
Physics /
Nov 28, 2005 |
3.3 / 5 (3) |
0
Researchers at AMICA have successfully fabricated the world's first MOSFETs on ultra-thin-body silicon-on-insulator (SOI) material with a crystalline gadolinium oxide (Gd2O3) gate dielectric.
Sematech to Investigate Alternate Channel Materials for Advanced Microchips
Mar 09, 2006 |
3.3 / 5 (3) |
0
Pushed by the scaling limits of silicon-based devices, Sematech engineers have launched a project to investigate alternative materials to Si in MOSFET channels, the critical pathways that allow electrical signals to flow ...
High Voltage DTMOS Power MOSFET Using A Super Junction Structure To Reduce Power Consumption
Mar 29, 2005 |
2.7 / 5 (3) |
0
Continuing its leadership role in developing innovative power semiconductors, Toshiba America Electronic Components, Inc. (TAEC) and its parent Toshiba Corp. announced a new power MOSFET called DTMOS, that employs a new super ...
Renesas Releases DC/DC Converter Power MOSFET Chip Set Achieving Industry's Highest Power Efficiency of 90 percent
Apr 13, 2005 |
2.7 / 5 (3) |
0
Renesas Technology Corp. today announced a power MOSFET chip set, comprising a high-side(*1) RJK0305DPB and low-side(*1) RJK0301DPB, for DC-DC converters used in servers, notebook PCs, communication devices, and similar products.Sample ...
