Search results for MOSFET
Toshiba develops essential technology for spintronics-based MOS field-effect transistor
Dec 09, 2009 |
4.5 / 5 (11) |
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(PhysOrg.com) -- Toshiba Corporation today announced that it has developed MOSFET cell based on spin transport electronics, or spintronics, an advanced semiconductor technology that makes use of the spin and ...
Digital Quantum Battery Could Boost Energy Density Tenfold
Dec 22, 2009 |
4.9 / 5 (37) |
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(PhysOrg.com) -- Physicists theorize that quantum phenomena could provide a major boost to batteries, with the potential to increase energy density up to 10 times that of lithium ion batteries. According to ...
Freescale creates first commercially viable GaAs MOSFET device
Jan 30, 2006 |
4.2 / 5 (15) |
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Freescale Semiconductor has developed the industry's first device that combines the high performance of gallium arsenide (GaAs) semiconductor compounds with the advantages of traditional metal oxide semiconductor field effect ...
NXP announces world's smallest high-performance MOSFET
Feb 25, 2008 |
4 / 5 (4) |
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NXP Semiconductors, the independent company founded by Philips, today announced a new range of small signal MOSFET devices housed in one of the world’s smallest packages, the SOT883. Boasting an ultra-small 1.0 x 0.6 mm footprint, ...
Rensselaer student invents alternative to silicon chip
May 13, 2008 |
4.6 / 5 (105) |
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Even before Weixiao Huang received his doctorate from Rensselaer Polytechnic Institute, his new transistor captured the attention of some of the biggest American and Japanese automobile companies. The 2008 ...
High Voltage DTMOS Power MOSFET Using A Super Junction Structure To Reduce Power Consumption
Mar 29, 2005 |
2.7 / 5 (3) |
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Continuing its leadership role in developing innovative power semiconductors, Toshiba America Electronic Components, Inc. (TAEC) and its parent Toshiba Corp. announced a new power MOSFET called DTMOS, that employs a new super ...
MOSFET Technology with Zero-Voltage and Zero-Current Transitions
Sep 03, 2004 |
2 / 5 (2) |
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STMicroelectronics has introduced an n-channel MOSFET for use in HID lamps, high-end ballasts and switch-mode power supplies that use zero-voltage and zero-current transitions.The STx9NK60ZD is the first dev ...
Smaller, cheaper cell phones possible
Jul 31, 2009 |
3.5 / 5 (2) |
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(PhysOrg.com) -- Ph.D. candidate Sataporn Pornpromlikit played a critical role in research at UC San Diego that made a big impact at a recent conference, and might provide manufacturers with the means for making cell phones ...
Renesas Releases DC/DC Converter Power MOSFET Chip Set Achieving Industry's Highest Power Efficiency of 90 percent
Apr 13, 2005 |
2.7 / 5 (3) |
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Renesas Technology Corp. today announced a power MOSFET chip set, comprising a high-side(*1) RJK0305DPB and low-side(*1) RJK0301DPB, for DC-DC converters used in servers, notebook PCs, communication devices, and similar products.Sample ...
Pushing on-state resistance below the milliohm
May 16, 2004 |
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Philips has demonstrated the world’s first sub-milliohm MOSFET. The device displays a number of technology developments that will increase efficiency, reduce device footprints and improve performance in power management applic ...
First Integrated MOSFET Capable of Functioning as a -48 V Telecom Shifter, Power Good Signal and Inrush Limiter
Jun 23, 2004 |
2 / 5 (1) |
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Versatile NUD3048 handles five times the continuous current and delivers higher breakdown voltage than competitive industry-standard 60 V rated N-Channel MOSFETs SUPERCOMM – Chicago, IL - June 23, 2004 – A leading glob ...
Freescale, University of Florida advance Moore's law
Jun 01, 2005 |
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Industry’s first double-gate transistor model enables smaller, more powerful silicon products that use less energy Freescale Semiconductor and the University of Florida have created the industry's first double-gate tra ...
New Low Voltage Trench MOSFETs Improve Power Circuit Efficiency and Battery-Life
Jan 28, 2005 |
1.5 / 5 (2) |
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Further expanding its portfolio of industry-leading Trench technology devices, ON Semiconductor today introduced eight new N-channel and P-channel, low voltage Trench MOSFETs. These devices reduce resistance between drain ...
World's first SOI MOSFET with crystalline Gd2O3
Physics /
Nov 28, 2005 |
3.3 / 5 (3) |
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Researchers at AMICA have successfully fabricated the world's first MOSFETs on ultra-thin-body silicon-on-insulator (SOI) material with a crystalline gadolinium oxide (Gd2O3) gate dielectric.
Researchers Induce Superconductivity in an Insulator
Nov 24, 2008 |
4.5 / 5 (36) |
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(PhysOrg.com) -- To continue to improve semiconductor devices, such as transistors, which form the backbone of the consumer electronics industry, researchers need to be able to control the movement and density of the electric ...
