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Toshiba, IBM, AMD Develop World's Smallest FinFET SRAM Cell with High-k/Metal Gate

Technology / Semiconductors

created Dec 17, 2008 | popularity not rated yet | comments 0

Toshiba, IBM, and AMD today announced that they have together developed a Static Random Access Memory (SRAM) cell that has an area of only 0.128 square micrometers (μm2), the world’s smallest functional SRAM cell that ...


ISSI acquires Alliance SRAM chip line

Technology / Business

created Jul 06, 2006 | popularity 1 / 5 (4) | comments 0

Integrated Silicon Solution Inc. said Thursday it had acquired the complete SRAM product line produced by Alliance Semiconductor.


South Korea's anti-trust watchdog has said it has found no evidence that leading chipmakers colluded to fix prices

SKorea clears chipmakers of cartel charges

Technology / Semiconductors

created Apr 20, 2009 | popularity not rated yet | comments 0

South Korea's anti-trust watchdog said Monday it has found no evidence that leading chipmakers in South Korea and other countries colluded to fix prices.


Researchers Build World's Smallest SRAM Memory Cell

Nanotechnology / Nanophysics

created Aug 18, 2008 | popularity 4.4 / 5 (24) | comments 3

(PhysOrg.com) -- IBM and its development partners -- AMD, Freescale, STMicroelectronics, Toshiba and the College of Nanoscale Science and Engineering (CNSE) -- today announced the first working static random access memory ...


UMC's Embedded DRAM, URAM Proven in 65nm Customer Silicon

Technology / Semiconductors

created Aug 04, 2008 | popularity 2 / 5 (1) | comments 0

UMC, a leading global semiconductor foundry, today announced that it has produced functional 65nm customer products incorporating URAM, the company's patented embedded DRAM (eDRAM) technology.


TSMC Achieves 28nm SRAM Yield Breakthrough

Technology / Semiconductors

created Aug 24, 2009 | popularity 5 / 5 (2) | comments 0

Taiwan Semiconductor Manufacturing Company has become the first foundry not only to achieve 28nm functional 64Mb SRAM yield, but also to achieve it across all three 28nm nodes.


Nanotech SRAM for battery devices unveiled

Electronics /

created Feb 09, 2006 | popularity 3.6 / 5 (11) | comments 0

Researchers have unveiled a SRAM test device for battery-powered devices with the lowest voltage requirements ever produced.


NEC Develops World's Fastest SRAM-Compatible MRAM With Operation Speed of 250MHz

NEC Develops World's Fastest SRAM-Compatible MRAM With Operation Speed of 250MHz

Technology / Semiconductors

created Nov 30, 2007 | popularity 5 / 5 (6) | comments 0

NEC Corporation today announced that it has succeeded in developing a new SRAM-compatible MRAM that can operate at 250MHz, the world's fastest MRAM operation speed.


Intel logo

Moore's Law Marches on at Intel

Technology / Semiconductors

created Sep 22, 2009 | popularity 4.3 / 5 (30) | comments 10

Intel President and CEO Paul Otellini today displayed a silicon wafer containing the world's first working chips built on 22nm process technology. The 22nm test circuits include both SRAM memory as well as ...


Toshiba develops cost-effective 32nm CMOS platform technology by advanced single exposure lithography

Technology / Semiconductors

created Dec 18, 2008 | popularity 5 / 5 (1) | comments 0

Toshiba Corporation today announced a cost-effective 32nm CMOS platform technology that offers higher density and improved performance while halving the cost per function from 45nm technology.


UMC Announces Industry's First 28nm SRAMs

Technology / Semiconductors

created Oct 27, 2008 | popularity 4.3 / 5 (3) | comments 0

UMC, a leading global semiconductor foundry, today announced that it has manufactured the foundry industry's first fully functional 28nm SRAM chips. The chips are based on UMC's independently developed low-leakage (LL) process ...


Renesas, Matsushita Develop Technique for Stablizing Operation of On-Chip 45nm SRAM

Renesas, Matsushita Develop Technique for Stablizing Operation of 45nm On-Chip SRAM

Technology / Semiconductors

created Feb 13, 2007 | popularity 4 / 5 (1) | comments 0

Renesas Technology and Matsushita Electric Industrial today announced the development of a technique that achieves stable operation with 45nm process generation bulk CMOS for SRAM (Static Random Access Memory) ...


Intel reaches 45 nanometer chip milestone

Intel reaches 45 nanometer chip milestone

Electronics /

created Jan 25, 2006 | popularity 3.6 / 5 (22) | comments 0

Intel said Wednesday it had produced the semiconductor industry's first chip using milestone 45-nanometer process technology.


SRAM technology with 0.8V operation voltage

Technology /

created Feb 17, 2005 | popularity 1.8 / 5 (6) | comments 0

Hitachi, Ltd.and Renesas Technology Corp. announced that they have developed low-voltage embedded SRAM technology for SoC's (system-on-a-chip) beyond the 90-nm process node. Using new circuit techniques, the power lines of ...


IMEC reports major progress in EUV

IMEC reports major progress in EUV

Technology / Semiconductors

created Jul 14, 2008 | popularity not rated yet | comments 1

IMEC reports functional 0.186µm2 32nm SRAM cells made with FinFETs from which the contact layer was successfully printed using ASML’s full field extreme ultraviolet (EUV) Alpha Demo Tool (ADT). Applied Materials, ...