News tagged with cmos
Sony develops new 'RGBW coding' and 'HDR movie' functions
Sony Corporation today announced the development of two CMOS image sensor models designed for use in smartphones and other devices. They are equipped with Sony's unique RGBW Coding function which ...
Electronics / Consumer & Gadgets
Jan 24, 2012 |
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Vertical silicon nanowires for nonvolatile memory devices
As electronic devices become smaller and more sophisticated, the search for compact nonvolatile memory becomes increasingly important. However, conventional silicon technologies, such as complementary metal-oxide-semiconductor ...
Dec 23, 2011 |
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Sharp to introduce industry’s thinnest CMOS camera module with optical image stabilization for smartphones
Sharp Corporation has developed a 12.1-Megapixel, 1/3.2-inch CMOS camera module with optical image stabilization that features the industrys thinnest profile (5.47 mm in height). The new RJ63YC100 is ...
Dec 01, 2011 |
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Imec demonstrates CMOS integrated poly-SiGe piezoresistive pressure sensor
Imec realized an integrated poly-SiGe-based piezoresistive pressure sensor directly fabricated above 0.13 µm copper (Cu) -backend CMOS technology. This represents not only the first integrated poly-SiGe ...
Oct 11, 2011 |
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Faster, smaller and more economical gallium nitride transistors
For the first time, researchers from CNRS France and ETH Zurich have succeeded in producing high-performance high-electron-mobility transistors (HEMTs) made of gallium nitride (GaN) on a silicon(110) wafer. ...
Sep 21, 2011 |
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World's fastest CMOS DAC for next-neneration optical transport systems launched
Fujitsu Semiconductor Europe (FSEU) announces its first- generation 8-bit, 4-channel DAC in 40nm CMOS technology. With a sampling rate range of 55 65 GSa/s per channel, small footprint and low power ...
Sep 08, 2011 |
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UV-transparent coating for image sensors
Image sensors as used in cell phones are partially color-blind. This is because of their coating, which prevents UV light from passing through. CMOS chips have as a result not been suitable for spectroscopy ...
Feb 08, 2011 |
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Atomically thin 'switch' makes for smarter electronic devices in the future
(PhysOrg.com) -- A new transistor made from graphene - the world's thinnest material - has been developed by a research team at the University of Southampton.
Feb 08, 2011 |
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IBM's breakthrough chip technology lights the path to exascale computing
(PhysOrg.com) -- IBM scientists today unveiled a new chip technology that integrates electrical and optical devices on the same piece of silicon, enabling computer chips to communicate using pulses of light ...
Dec 01, 2010 |
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Detecting drivers in microsleep with infrared LED
A new infrared light-emitting diode (IR-LED) from the Siemens subsidiary Osram Opto Semiconductors is designed to help recognize the hazardous microsleep that affects motorists. In addition to the IR-LED, ...
Oct 20, 2010 |
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Sony commercializes 16.41 megapixel 'Exmor R' back-illuminated CMOS image sensors for mobile phones
Sony today announced the commercialization of two new "Exmor R" back-illuminated CMOS image sensors with dramatically improved photographic performance including significantly high sensitivity and low noise. ...
Oct 07, 2010 |
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Image sensors for extreme temperatures
Image sensors which are used as electronic parking aids in cars or for quality control in production systems have to be able to withstand the often very high temperatures that prevail in these environments. ...
Sep 20, 2010 |
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Panasonic to start commercial shipment of 32-nm generation system LSI
Panasonic Corporation has successfully developed a new mass-production technology for leading-edge 32-nm generation system LSIs, and is ready to ship system LSIs (model number: MN2WS0150) based on this technology ...
Sep 16, 2010 |
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Canon develops world's largest CMOS image sensor, with ultra-high sensitivity
Canon Inc. announced today that it has developed the world's largest CMOS image sensor, with a chip size measuring 202 x 205 mm. Because its expanded size enables greater light-gathering capability, the sensor ...
Aug 31, 2010 |
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Canon develops world's first 120 megapixels APS-H-size CMOS image sensor
Canon announced today that it has developed an APS-H-size CMOS image sensor that delivers an image resolution of approximately 120 megapixels (13,280 x 9,184 pixels), the world's highest level of resolution ...
Aug 26, 2010 |
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CMOS
Complementary metal–oxide–semiconductor (CMOS) ( /ˈsiːmɒs/) is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. Frank Wanlass patented CMOS in 1967 (US patent 3,356,858).
CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS). The words "complementary-symmetry" refer to the fact that the typical digital design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.
Two important characteristics of CMOS devices are high noise immunity and low static power consumption. Significant power is only drawn when the transistors in the CMOS device are switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor-transistor logic (TTL) or NMOS logic. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.
The phrase "metal–oxide–semiconductor" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminum was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
For more information about CMOS, read the full article at
Wikipedia.
This text uses material from Wikipedia and is available under the GNU Free Documentation License.