News tagged with dopant atoms
Researchers peer into nanowires to measure dopant properties
Apr 02, 2009 |
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(PhysOrg.com) -- Semiconductor nanowires -- tiny wires with a diameter as small as a few billionths of a meter — hold promise for devices of the future, both in technology like light-emitting diodes and in ...
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Researchers find a crucial difficulty in semiconductor device scaling
Sep 06, 2007 |
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In 1959, Nobel Prize winner Richard Feynman presented a talk entitled "There's Plenty of Room at the Bottom." Feynman concluded that there was no physical reason why humans couldn't manipulate atoms. However, ...
Researchers shine light on atomic transistor
Nov 22, 2006 |
4.7 / 5 (31) |
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Researchers from TU Delft and the FOM Foundation (Netherlands) have successfully measured transport through a single atom in a transistor. This research offers new insights into the behaviour of so-called dopant ...
A 'squeeze' in cuprates may explain superconducting temperatures
May 07, 2008 |
4.7 / 5 (34) |
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New experiments at Cornell have verified a theory that variations in the distance between atoms in cuprate superconductors account for differences in the temperature at which the material begins to superconduct. ...
Researchers discover hydrogen can form multicenter bonds
Dec 04, 2006 |
4.2 / 5 (25) |
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Researchers at the University of California, Santa Barbara have shown that, under the right circumstances, hydrogen can form multicenter bonds, where one hydrogen atom simultaneously bonds to as many as four or six other ...
Silicon with afterburners: New process could be boon to electronics manufacturer
Nanotechnology / Nanomaterials
Jul 23, 2009 |
4.7 / 5 (11) |
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Scientists at Rice University and North Carolina State University have found a method of attaching molecules to semiconducting silicon that may help manufacturers reach beyond the current limits of Moore's ...
New surface chemistry may extend life of technology for making transistors
Physics /
Sep 28, 2004 |
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Researchers at the University of Illinois at Urbana-Champaign have developed a technique that uses surface chemistry to make tinier and more effective p-n junctions in silicon-based semiconductors. The method could permit the semiconductor industry to significantly extend t ...
Locationg crucial atoms in superconductors
Physics /
Aug 25, 2005 |
5 / 5 (1) |
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With an advanced imaging technique and a savvy strategy, researchers at Cornell University's Laboratory of Atomic and Solid State Physics (LAASP) have shown how adding charge-carrying atoms like oxygen to a superconductor ...
A New Glance on Microscopic Images
Sep 16, 2009 |
4.5 / 5 (2) |
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A doctoral student at the research center Forschungszentrum Dresden-Rossendorf (Germany) suggests interpreting the images generated by Kelvin probe force microscopy in a new way. She recently published her ...
Novel Ion Optics Design Ensures High Sensitivity And Mass Resolution For 3D Atom Probe
Apr 15, 2005 |
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The combination of the high mass-resolution reflectron lens and a patented, three pair delay line detector brings exceptional sensitivity to the 3-Dimensional Atom Probe (3DAP) from Oxford nanoScience Ltd. This unique combination ...
Keep on spinning: A persistent spin state that could revolutionize spintronics
Apr 02, 2009 |
4.2 / 5 (10) |
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(PhysOrg.com) -- By controlling the collective spin state of highly mobile electrons in semiconductors, researchers in the Materials Sciences Division (MSD) at the U.S. Department of Energy's Lawrence Berkeley ...
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