News tagged with electron leakage
Smart Lighting: New LED Drops the 'Droop'
Jan 12, 2009 |
4.7 / 5 (22) |
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(PhysOrg.com) -- Researchers at Rensselaer Polytechnic Institute have developed and demonstrated a new type of light emitting diode (LED) with significantly improved lighting performance and energy efficiency.
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Toshiba's breakthrough in SSRM technology will Improve Cutting-Edge LSI
Apr 16, 2007 |
4.4 / 5 (26) |
0
Toshiba Corp. today announced that it has achieved a breakthrough in imaging electron-carrier paths and impurities in semiconductors that allows analysis at the 1-nanometer level for the first time. This major ...
TSMC Achieves 28nm SRAM Yield Breakthrough
Aug 24, 2009 |
5 / 5 (2) |
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Taiwan Semiconductor Manufacturing Company has become the first foundry not only to achieve 28nm functional 64Mb SRAM yield, but also to achieve it across all three 28nm nodes.
A 20-year old mystery mechanism influencing DRAM cell retention time fluctuation clarified
Physics /
Dec 08, 2005 |
4.2 / 5 (6) |
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Hitachi, Ltd., in cooperation with Elpida Memory announced today that they have identified that the leakage current fluctuation of the p-n junction*1) is the primary factor influencing the charge retention time fluctuation ...
To peer inside a living cell
Oct 06, 2009 |
5 / 5 (11) |
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(PhysOrg.com) -- Quantum mechanics could help build ultra-high-resolution electron microscopes that won't destroy living cells, according to MIT electrical engineers.
The Spin Cycle: Nanoresearch could lead to next generation of transistors
Oct 20, 2009 |
4.9 / 5 (11) |
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(PhysOrg.com) -- For decades, the transistors inside radios, televisions and other everyday items have transmitted data by controlling the movement of the electron’s charge. Scientists now have discovered ...
Fujitsu Develops Technology for High-Reliability Gallium Nitride HEMT
Jun 22, 2007 |
4.4 / 5 (7) |
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Fujitsu Laboratories today announced the development of a new high-reliability technology for high power gallium nitride (GaN) high electron-mobility transistors (HEMT), paving the way for commercialization ...
SEMATECH and NIST Collaborate on Chemical Analysis of Advanced Gate Dielectrics
May 30, 2007 |
4 / 5 (2) |
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Nitrogen incorporation in thin HfO2/SiO2 film systems representative of high-k gate dielectric layers in advanced metal-oxide semiconductor field-effect transistors (MOSFETs) has been investigated by synch ...
Focal therapy and prostate cancer
Oct 22, 2009 |
5 / 5 (3) |
1
(PhysOrg.com) -- UCL researcher Hashim Uddin Ahmed is conducting a series of world-first trials into an alternative form of treatment for prostate cancer.
Electron self-injection into an evolving plasma bubble
Nov 02, 2009 |
4.8 / 5 (4) |
1
Particle accelerators are among the largest and most expensive scientific instruments. Thirty years ago, theorists John Dawson and Toshiki Tajima proposed an idea for making them thousands of times smaller: ...
Nano-designed transistors with disordered materials, but high performance
May 02, 2008 |
4 / 5 (14) |
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The Holy Grail for transistor designers has been the requirement to be able to get high performance at reduced costs over very large substrate areas. Transistors on cheap and flexible substrates like glass and plastics are ...
List of search results for electron leakage
