Engineers from Southwest Research Institute (SwRI) have patented a flash memory storage system that allows satellites to collect and store vast amounts of data for later transmission to ground stations.
Space Exploration
Feb 27, 2018
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(Phys.org)—Flash memory—the data storage method often used in phones, computers, and other devices—is continually being miniaturized in order to improve device performance. In an attempt to reduce the short-circuiting ...
(Phys.org) —New molecules could be the key to solving a looming problem with flash memory storage, researchers say in a new report published in the journal Nature today.
General Physics
Nov 20, 2014
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Samsung Electronics today announced that it has begun mass producing the industry's first 3-bit multi-level-cell (MLC) three-dimensional (3D) Vertical NAND (V-NAND) flash memory, for use in solid state drives (SSDs).
Hardware
Oct 10, 2014
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US computer storage company SanDisk said Monday it was buying flash memory firm Fusion-io for $1.6 billion.
Business
Jun 16, 2014
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A team at the University of California, Riverside Bourns College of Engineering has developed a novel way to build what many see as the next generation memory storage devices for portable electronic devices including smart ...
Electronics & Semiconductors
Aug 14, 2013
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For literary types, memory is often linked with Marcel Proust's madeleine cookie, which, in a single bite, launches a nostalgic reverie that lasts through seven volumes. But for scientists and engineers at the University ...
Electronics & Semiconductors
Mar 26, 2013
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(Phys.org) -- Memory devices for computers require a large collection of components that can switch between two states, which represent the 1's and 0's of binary language. Engineers hope to make next-generation chips with ...
Condensed Matter
Jun 21, 2012
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TDK Corporation has developed the eSSD series, a single chip 3Gbps SSD with serial ATA interface that uses multi-chip technology to integrate the TDK SSD controller GBDriver RS3 with NAND type flash memory in a single package. ...
Hardware
Mar 23, 2012
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For the first time, engineering researchers have been able to watch in real time the nanoscale process of a ferroelectric memory bit switching between the 0 and 1 states.
General Physics
Nov 17, 2011
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