News tagged with flash memory technology
SanDisk, Toshiba Develop 32-nanometer NAND Flash Technology
Feb 11, 2009 |
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SanDisk and Toshiba today announced the co-development of multi-level cell (MLC) NAND flash memory using 32-nanometer process technology to produce a 32-gigabit (Gb) 3-bits-per-cell (X3) memory chip. The breakthrough ...
Sandisk Unleashes World's Fastest MLC SSD Family
Jan 08, 2009 |
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SanDisk Corporation today unveiled its third-generation family of solid-state drives (SSDs). Using multi-level cell (MLC) NAND flash memory technology, SanDisk’s G3 Series establishes new benchmarks in performance ...
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SanDisk Ships Flash Memory Cards With 64 Gigabit X4 NAND Technology
Oct 16, 2009 |
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SanDisk announced it has begun production shipments of flash memory cards based on the company's advanced X4 flash memory technology. This innovative new technology holds four bits of data in each memory cell, ...
Toshiba to launch 32nm process NAND flash memory
Apr 27, 2009 |
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Toshiba Corporation today announced that it will start shipping NAND flash memory products fabricated with 32nm process technology. Samples of the world's first 32nm generation, 32-gigabit (Gb) single chips (4 gigabytes (GB)), ...
Samsung Samples First 50-nanometer 16Gb NAND Flash for Solid State Disks
Jan 03, 2007 |
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Samsung Electronics announced that it is now sampling its 16-gigabit (Gb) NAND flash memory with customers – the first NAND flash using 50 nanometer process technology.
SanDisk, Toshiba to Launch 56-Nanometer, 16-Gigabit High-Performance NAND Flash Memory
Jan 24, 2007 |
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SanDisk today announced that it expects to see the launch of the next generation of NAND flash memory this quarter as it begins the transition from 70 nanometer (nm) to 56nm multi-level cell (MLC) flash memory chips at Fab ...
Intel First With 65nm NOR Flash Memory Chips
Apr 04, 2006 |
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Intel Corporation is the first to sample NOR multi-level cell flash memory chips at 1-gigabit density using its advanced 65-nanometer (nm) process technology. Intel’s NOR Flash memory chips are used in devices ...
SanDisk to Launch 43-Nanometer Multi-Level NAND Flash Memory in Mass Production
Feb 06, 2008 |
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SanDisk Corporation today announced the introduction of Multi-Level (MLC) NAND flash memory using 43 nanometer process technology co-developed with Toshiba Corporation in Japan.
Toshiba to launch 43nm SLC NAND flash memory
Oct 28, 2008 |
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Toshiba today announced the launch of a new line-up of 43nm single-level cell (SLC) NAND flash memory products available in densities ranging from 512Mbits to 64 gigabits (Gb) and in a total of 16 versions.
A Glimpse of the Future MEMS-based Storage: Totally Green & Thumbnail Size
Jun 23, 2009 |
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The University of Twente--Enschede, The Netherlands published newly conferred PhD Mohammed Ghiath Khatib's thesis, "MEMS-based Storage Devices: Integration in Energy-Constrained Mobile System". The new MEMS, ...
Intel, Micron Sampling Industry-Leading Multi-Level Cell NAND Flash Memory
Apr 25, 2007 |
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Intel Corporation and Micron Technology, Inc., today announced they are sampling industry-leading 50 nanometer multi-level cell (MLC) NAND flash memory manufactured by their NAND flash memory joint venture, IM Flash Technologies.
Micron, Intel try out 50 nm NAND memory
Jul 25, 2006 |
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Semiconductor giants Micron and Intel said Tuesday they were sampling the first NAND flash memory chips built on 50-nanometer processing technology.
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