News tagged with gallium arsenide
Fujitsu Develops Technology for Low-Temperature Full-Service Direct Formation of Graphene Transistors on Large-Scale Sub
Nov 27, 2009 |
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Fujitsu Laboratories today announced, as a world first, the development of a novel technology for forming graphene transistors directly on the entire surface of large-scale insulating substrates at low temperatures ...
Spin polarization achieved in room temperature silicon
Nov 27, 2009 |
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(PhysOrg.com) -- A group in The Netherlands has achieved a first: injection of spin-polarized electrons in silicon at room temperature. This has previously been observed only at extremely low temperatures, ...
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Danish nanowires have great potential
Nov 02, 2009 |
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Danish nanophysicists have developed a new method for manufacturing the cornerstone of nanotechnology research - nanowires. The discovery has great potential for the development of nanoelectronics and highly ...
New 'finFETs' promising for smaller transistors, more powerful chips
Nov 10, 2009 |
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(PhysOrg.com) -- Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers ...
Micro Sparky: Engineering the tiniest Sun Devil
Oct 30, 2009 |
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(PhysOrg.com) -- An Arizona State University engineering student may have found the tiniest - yet most cleverly inventive - way to show school spirit.
JQI researchers create entangled photons from quantum dots
Nov 18, 2009 |
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To exploit the quantum world to the fullest, a key commodity is entanglement—the spooky, distance-defying link that can form between objects such as atoms even when they are completely shielded from one another. Now, physicists ...
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