News tagged with gallium arsenide
Spin polarization achieved in room temperature silicon
Nov 27, 2009 |
4.8 / 5 (21) |
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(PhysOrg.com) -- A group in The Netherlands has achieved a first: injection of spin-polarized electrons in silicon at room temperature. This has previously been observed only at extremely low temperatures, ...
Fujitsu Develops Technology for Low-Temperature Full-Service Direct Formation of Graphene Transistors on Large-Scale Sub
Nov 27, 2009 |
5 / 5 (22) |
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Fujitsu Laboratories today announced, as a world first, the development of a novel technology for forming graphene transistors directly on the entire surface of large-scale insulating substrates at low temperatures ...
Discovery brings new type of fast computers closer to reality
Sep 27, 2009 |
4.6 / 5 (34) |
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Physicists at UC San Diego have successfully created speedy integrated circuits with particles called "excitons" that operate at commercially cold temperatures, bringing the possibility of a new type of extremely ...
GaAs self-assembled nanowires could make chips smaller and faster
Apr 20, 2009 |
4.4 / 5 (5) |
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(PhysOrg.com) -- Researchers at the University of Illinois have found a new way to make transistors smaller and faster. The technique uses self-assembled, self-aligned, and defect-free nanowire channels made ...
Sharp Develops Solar Cell with World's Highest Conversion Efficiency of 35.8%
Oct 22, 2009 |
4.5 / 5 (26) |
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Sharp Corporation has achieved the world's highest solar cell conversion efficiency (for non-concentrator solar cells) of 35.8% using a triple-junction compound solar cell.
Operating quantum memory at room temperature
Aug 25, 2008 |
4.5 / 5 (42) |
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Quantum dots, along with quantum wires, have been attracting notice over the past decade as possible building blocks of quantum information processing. Indium arsenide quantum dots (InAs) can be used for memory operations ...
Graphene -- the copy beats the original
Jul 17, 2009 |
4.9 / 5 (25) |
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(PhysOrg.com) -- The first artificial graphene has been created at the NEST laboratory of the Italian Institute for the Physics of Matter (INFM-CNR) in Pisa. It is sculpted on the surface of a gallium-arsenide ...
Graphene and gallium arsenide: Two perfect partners find each other
Sep 16, 2009 |
2 / 5 (2) |
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It is the marriage of two top candidates for the electronics of the future, both excentric and extremely interesting: Graphene, one of the partners, is an extremely thin fellow and besides, very young.
Fujitsu Develops Millimeter-Wave Gallium-Nitride Transceiver Amplifier Chipset
Sep 30, 2009 |
3 / 5 (1) |
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Fujitsu announced today the development of the world's first gallium-nitride HEMT-based transceiver amplifier chipset for broadband wireless transmission equipment operating in the millimeter bandwidth, the ...
