News tagged with hafnium oxide
New form of hafnium oxide developed
(PhysOrg.com) -- A novel material developed by researchers at the University of Cambridge is opening up new possibilities for next generation electronic and optoelectronic devices, and paving the way for further ...
Feb 07, 2012 |
4.6 / 5 (5) |
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Carbon-Nanotube Memory that Really Competes
(PhysOrg.com) -- Researchers in Finland have created a form of carbon-nanotube based information storage that is comparable in speed to a type of memory commonly used in memory cards and USB "jump" drives.
Jan 26, 2009 |
4.2 / 5 (21) |
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Search results for hafnium oxide
Researchers find molybdenite may be better suited for integrated logic circuits than graphene
(PhysOrg.com) -- Because of its physical limitations, silicon use in tiny integrated logic circuits will have to one day soon be replaced by something that can work in a smaller state. That is, if we want ...
Nanotechnology / Nanomaterials
Feb 01, 2012 |
5 / 5 (2) |
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New 3-D transistors promising future chips, lighter laptops
(PhysOrg.com) -- Researchers from Purdue and Harvard universities have created a new type of transistor made from a material that could replace silicon and have a 3-D structure instead of conventional flat computer chips.
Dec 06, 2011 |
4.8 / 5 (12) |
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From the Earth to the Moon: Resolving estimates of proto-Earth accretion with lunar-forming impact
(PhysOrg.com) -- One of the more challenging fields of scientific inquiry is planetary formation – and most relevant is that of our own Earth and Moon. The current view, based on chronometry (scientific ...
Nov 14, 2011 |
5 / 5 (8) |
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Rice-made memory chips headed to space
Rice University will send an experiment to the International Space Station (ISS) later this year. If all goes perfectly, it will be precisely the same when it returns two years later.
Space & Earth / Space Exploration
May 24, 2011 |
5 / 5 (1) |
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Fujitsu Develops Technology for Low-Temperature Full-Service Direct Formation of Graphene Transistors on Large-Scale Sub
Fujitsu Laboratories today announced, as a world first, the development of a novel technology for forming graphene transistors directly on the entire surface of large-scale insulating substrates at low temperatures ...
Nov 27, 2009 |
5 / 5 (24) |
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New 'finFETs' promising for smaller transistors, more powerful chips
(PhysOrg.com) -- Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers ...
Nov 10, 2009 |
4.9 / 5 (15) |
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Researchers create freestanding nanoparticle films without fillers
Nanoparticle films are no longer a delicate matter: Vanderbilt physicists have found a way to make them strong enough so they don't disintegrate at the slightest touch.
Nanotechnology / Nanomaterials
Jun 09, 2009 |
3.5 / 5 (2) |
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Terahertz Waves Are Effective Probes for IC Heat Barriers
(PhysOrg.com) -- By modifying a commonly used commercial infrared spectrometer to allow operation at long-wave terahertz frequencies, researchers at the National Institute of Standards and Technology discovered ...
May 06, 2009 |
3 / 5 (7) |
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IMEC increases performance of high-k metal gate planar CMOS and FinFETs
At today’s IEEE International Electron Devices Meeting, IMEC reports significant progress in improving the performance of planar CMOS using hafnium-based high-k dielectrics and tantalum-carbide metal gates ...
Dec 11, 2007 |
3.8 / 5 (5) |
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Pushing the limits of chip miniaturisation
Over the last four decades, computer chips have found their way into virtually every electronic device in the world. During that time they have become smaller, cheaper and more powerful, but, for a team of ...
Nov 06, 2007 |
4.4 / 5 (25) |
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List of search results for hafnium oxide
