News tagged with hemt
Fujitsu Develops Millimeter-Wave Gallium-Nitride Transceiver Amplifier Chipset
Sep 30, 2009 |
3 / 5 (1) |
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Fujitsu announced today the development of the world's first gallium-nitride HEMT-based transceiver amplifier chipset for broadband wireless transmission equipment operating in the millimeter bandwidth, the ...
Fujitsu Develops World's First Gallium-Nitride HEMT for Power Supply
Jun 24, 2009 |
5 / 5 (3) |
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Fujitsu Laboratories today announced the development of a new structure for gallium-nitride high electron-mobility transistors (GaN)(HEMT) that can minimize power loss in power supplies, thus enabling reduced ...
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Gallium Nitride Power Transistor for Wireless Base Stations
Jan 12, 2005 |
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According to JCN Network, Oki Electric has announced that it has started sample provisioning of it's Gallium Nitride High Electron Mobility Transistor (GaN-HEMT), a high frequency wave power transistor for wireless base stations. The new transistor, using gallium nitride ma ...
Fujitsu Develops C- to X- Ultra-Wideband Gallium-Nitride HEMT Power Amplifier Featuring High Output and Efficiency
Nov 04, 2008 |
3.8 / 5 (6) |
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(PhysOrg.com) -- Fujitsu Laboratories announced today the development of a high-performance power amplifier based on gallium nitride (GaN) high electron mobility transistors (HEMT), which as a hybrid amplifier ...
Fujitsu Develops Technology for High-Reliability Gallium Nitride HEMT
Jun 22, 2007 |
4.4 / 5 (7) |
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Fujitsu Laboratories today announced the development of a new high-reliability technology for high power gallium nitride (GaN) high electron-mobility transistors (HEMT), paving the way for commercialization ...
Fujitsu Develops World's First GaN HEMT Able to Cut Power in Standby Mode and Achieve High Output
Oct 10, 2008 |
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Fujitsu today announced the development of a new type of gallium nitride (GaN)-based high electron mobility transistor (HEMT) that features a new structure ideal for use in amplifiers for microwave and millimeter-wave ...
IMEC demonstrates growth of GaN high-electron mobility transistors on 150 mm silicon
Jun 01, 2006 |
4.8 / 5 (5) |
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IMEC, Europe's leading independent nanoelectronics and nanotechnology research institute, has demonstrated the growth of low-sheet-resistivity AlGaN/GaN high-electron mobility transistors (HEMTs) on 150mm silicon (Si) wafers. ...
Fujitsu Develops Breakthrough Technology for Low-Cost Production of Gallium-Nitride HEMT
Dec 21, 2004 |
2.6 / 5 (5) |
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Reduces production costs to less than 1/3 Fujitsu Laboratories Ltd. today announced the development of a technology that enables low-cost production of gallium-nitride (GaN)(1) high electron mobility transistors ...
Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in Ku-band
Oct 09, 2007 |
4.3 / 5 (8) |
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Toshiba Corporation today announced that it has developed a gallium nitride (GaN) power field effect transistor (FET) for the Ku-band (12GHz to 18GHz) frequency range that achieves an output power of 65.4W ...
Toshiba Announces Gallium Nitride Power FET With World's Highest Power Output
Sep 12, 2005 |
4 / 5 (4) |
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Toshiba Corporation today announced development of a gallium nitride (GaN) power field effect transistor (FET) that far surpasses the operating performance of the gallium arsenide (GaAs) FET widely used in base stations for ...
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