News tagged with hemt
World's first GaN HEMT T/R module operating in the C-Ku band
Fujitsu Laboratories today announced that it has successfully developed the world's first transmitter/receiver (T/R) module using gallium-nitride (GaN)high electron mobility transistor (HEMT) technology that ...
Jun 06, 2011 |
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Fujitsu develops GaN HEMT power amplifier featuring world's highest output in millimeter-wave W-Band
Fujitsu announced the development of a power amplifier using gallium nitride (GaN) High Electron Mobility Transistors (HEMT) that has achieved the world's highest output performance of 1.3W for wireless communications ...
Oct 06, 2010 |
4.7 / 5 (3) |
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Fujitsu Develops Millimeter-Wave Gallium-Nitride Transceiver Amplifier Chipset
Fujitsu announced today the development of the world's first gallium-nitride HEMT-based transceiver amplifier chipset for broadband wireless transmission equipment operating in the millimeter bandwidth, the ...
Sep 30, 2009 |
3 / 5 (1) |
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Fujitsu Develops World's First Gallium-Nitride HEMT for Power Supply
Fujitsu Laboratories today announced the development of a new structure for gallium-nitride high electron-mobility transistors (GaN)(HEMT) that can minimize power loss in power supplies, thus enabling reduced ...
Jun 24, 2009 |
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Search results for hemt
Faster, smaller and more economical gallium nitride transistors
For the first time, researchers from CNRS France and ETH Zurich have succeeded in producing high-performance high-electron-mobility transistors (HEMTs) made of gallium nitride (GaN) on a silicon(110) wafer. ...
Sep 21, 2011 |
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Imec processes first power devices on 200mm CMOS-compatible GaN-on-Si
(PhysOrg.com) -- Imec and its partners in the GaN industrial affiliation program (IIAP) have produced device-quality wafers with GaN/AlGaN layers on 200mm silicon wafers.
May 26, 2011 |
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Electron billiards in nanoscale circuits: Characterizing photoelectrons with quantum point contacts
In solar cells, solar radiation boosts electrons to higher energy states, thereby releasing them from their atomic bonds as electricity begins to flow. Scientists led by Professor Alexander Holleitner, physicist at the Technische ...
Oct 21, 2010 |
4.7 / 5 (3) |
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Fujitsu Develops Gallium-Nitride HEMT Amplifier Featuring World's Highest Output in the C-Ku Band
Fujitsu today announced the development of an amplifier based on gallium-nitride (GaN) high electron mobility transistor (HEMT) technology, which features an output of 12.9W - more than twice the output of ...
May 28, 2010 |
4.8 / 5 (4) |
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Fast Transistors Could Save Energy
(PhysOrg.com) -- Transistors, the cornerstone of electronics, are lossy and therefore consume energy. Swiss esearchers from the ETH Zurich and EPF Lausanne have developed transistors targeting high switching ...
Apr 20, 2010 |
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Two chips in one: Researchers combine microprocessor materials
(PhysOrg.com) -- An MIT team led by Tomás Palacios, assistant professor in the Department of Electrical Engineering and Computer Science, has succeeded in combining two semiconductor materials, silicon ...
Sep 16, 2009 |
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Fujitsu Develops C- to X- Ultra-Wideband Gallium-Nitride HEMT Power Amplifier Featuring High Output and Efficiency
(PhysOrg.com) -- Fujitsu Laboratories announced today the development of a high-performance power amplifier based on gallium nitride (GaN) high electron mobility transistors (HEMT), which as a hybrid amplifier ...
Nov 04, 2008 |
3.8 / 5 (6) |
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Fujitsu Develops World's First GaN HEMT Able to Cut Power in Standby Mode and Achieve High Output
Fujitsu today announced the development of a new type of gallium nitride (GaN)-based high electron mobility transistor (HEMT) that features a new structure ideal for use in amplifiers for microwave and millimeter-wave ...
Oct 10, 2008 |
5 / 5 (5) |
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Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in Ku-band
Toshiba Corporation today announced that it has developed a gallium nitride (GaN) power field effect transistor (FET) for the Ku-band (12GHz to 18GHz) frequency range that achieves an output power of 65.4W ...
Oct 09, 2007 |
4.3 / 5 (8) |
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Fujitsu Develops Technology for High-Reliability Gallium Nitride HEMT
Fujitsu Laboratories today announced the development of a new high-reliability technology for high power gallium nitride (GaN) high electron-mobility transistors (HEMT), paving the way for commercialization ...
Jun 22, 2007 |
4.4 / 5 (7) |
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List of search results for hemt
