Promising new alloy for resistive switching memory

Memory based on electrically-induced "resistive switching" effects have generated a great deal of interest among engineers searching for faster and smaller devices because resistive switching would allow for a higher memory ...

The '50-50' chip: Memory device of the future?

A new, environmentally-friendly electronic alloy consisting of 50 aluminum atoms bound to 50 atoms of antimony may be promising for building next-generation "phase-change" memory devices, which may be the data-storage technology ...

Magnetic materials: Forging ahead with a back-to-basics approach

Scientists have recently started to explore the possibility of using an intrinsic property of the electron known as spin for processing and storing information. Magnetic fields can influence the dynamics of electron spin, ...

Driving an electron spin vortex "Skyrmion" with a microcurrent

RIKEN and the National Institute for Materials Science (NIMS) have succeeded in forming a skyrmion crystal in which electron spin is aligned in a vortex shape in a microdevice using the helimagnet FeGe. The skyrmion crystal ...

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