Ultralow power consumption for data recording

A team of researchers at Tohoku University, in collaboration with the National Institute of Advanced Industrial Science and Technology (AIST) and Hanyang University, has developed new phase change material with electrical ...

New Fujitsu V series FRAMs deliver optimal design flexibility

Fujitsu Semiconductor America (FSA) today extended its growing portfolio of Ferroelectric memory products with the introduction of a new Ferroelectric Random Access Memory (FRAM) product series that features a wide voltage ...