News tagged with nand
Intel packs performance and reliability into its latest SSD 520 series
Intel Corporation announced today its fastest, most robust client/consumer solid-state drive (SSD) to date, the Intel Solid-State Drive 520 Series (Intel SSD 520), a 6 gigabit-per-second (gbps) SATA III SSD ...
Feb 07, 2012 |
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S. Korea's Hynix swings to red in Q4 on poor demand
South Korea's Hynix Semiconductor, the world's second-largest maker of memory chips, said Thursday it swung into the red in the fourth quarter as chip prices fell on weak demand for personal computers.
Feb 02, 2012 |
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Seoul approves Samsung's new investment in China
South Korea on Wednesday approved Samsung Electronics' plan to build a new plant in China to produce high-tech memory chips used in tablets and smartphones, the Ministry of Knowledge Economy said.
Jan 04, 2012 |
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Samsung to build flash memory chip line in China
Samsung Electronics, the world's largest memory chip maker, said Tuesday it would build a new production line in China for flash memory chips used in tablets and smartphones.
Dec 06, 2011 |
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Samsung starts new chip line to boost flash memory
Samsung Electronics, the world's largest memory chip maker, said Thursday it has begun mass production at a new line to raise production of flash memory chips used in tablets and smartphones.
Sep 22, 2011 |
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Samsung offers industry's first 64-gigabit MLC NAND flash, using toggle DDR 2.0 interface
Samsung Electronics today announced that it has started the industry's first production of a high-performance toggle DDR 2.0 multi-level-cell (MLC) memory chip. The new NAND flash chip features a 64 gigabit ...
May 13, 2011 |
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Toshiba launches 19nm process NAND flash memory
(PhysOrg.com) -- Toshiba Corporation today announced that it has fabricated NAND flash memories with 19nm process technology, the finest level yet achieved. This latest technology advance has already been applied to 2-bit-per-cell ...
Apr 21, 2011 |
4.7 / 5 (6) |
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Intel, Micron sample 20nm NAND flash
Intel and Micron Technology today introduced a new, finer 20-nanometer (nm) process technology for manufacturing NAND flash memory. The new 20nm process produces an 8-gigabyte (GB) multi-level cell (MLC) NAND ...
Apr 15, 2011 |
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Toshiba introduces new embedded-NAND flash memory in 24nm process
Toshiba Corporation today announced that it has enhanced its NAND flash portfolio with the introduction of next-generation 24-nanometer (nm) generation "SmartNAN," which integrate robust error management ...
Apr 06, 2011 |
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iNAND embedded flash drives enable continued development of powerful mobile devices
SanDisk Corporation, the global leader in flash memory cards, today announced its next generation of iNAND and iNAND Ultra embedded flash drives featuring smaller and thinner form factors. Available in packages ...
Feb 14, 2011 |
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Micron unveils innovative flash memory devices that extend the life of NAND
Micron Technology, Inc. today introduced a portfolio of high-capacity flash memory products that will lengthen the life of NAND for years to come. By integrating the error management techniques in the same NAND package, the ...
Dec 02, 2010 |
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Samsung now producing 20nm-class, 64-gigabit 3-bit NAND flash memory
Samsung Electronics announced today the industrys first production of a 3-bit-cell (3bit), 64 gigabit (Gb) NAND flash using 20 nanometer (nm)-class process technology. The highly advanced new chip can ...
Oct 13, 2010 |
4.7 / 5 (3) |
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Elpida and Spansion develop 4-Gigabit NAND flash memory
Elpida Memory and Spansion today announced they have created the industry's first charge-trapping 1.8 V, 4-gigabit SLC (Single Level Cell) NAND Flash memory. This NAND memory, based on Spansion's MirrorBit charge-trapping ...
Sep 02, 2010 |
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Computer chip that computes probabilities and not logic
(PhysOrg.com) -- Lyric Semiconductor has unveiled a new type of chip that uses probability inputs and outputs instead of the conventional 1's and 0's used in logic chips today. Crunching probabilities is much ...
Samsung, Toshiba to Support New Standardized NAND Specification for High-performance Applications
Samsung Electronics and Toshiba today announced their commitment to development of the most advanced high-performance NAND flash memory technology available today - a double data rate (DDR) NAND flash memory with a 400 megabit-per-second ...
Jul 22, 2010 |
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Nand
NAND may stand for:
For more information about Nand, read the full article at
Wikipedia.
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