News tagged with nickel silicide
TSMC Unveils First Commercial 65-Nanometer Multi-Time Programmable Non-Volatile Memory Technology
Taiwan Semiconductor Manufacturing Company today announced the foundry segment’s first functional 65-nanometer multi-time programmable (MTP) non-volatile memory (NVM) process technology.
Jul 02, 2009 |
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Search results for nickel silicide
The 'new' kilogram is approaching: Avogadro constant determined with enriched silicon-28
A milestone in the international Avogadro project coordinated by the Physikalisch-Technische Bundesanstalt (PTB) has been reached: With the aid of a single crystal of highly enriched 28Si, the Avogadro constant ...
Feb 09, 2011 |
4.5 / 5 (10) |
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Single-crystal films could advance solar cells (w/ Video)
(PhysOrg.com) -- Cornell researchers have developed a new method to create a patterned single-crystal thin film of semiconductor material that could lead to more efficient photovoltaic cells and batteries.
Nanotechnology / Nanomaterials
Oct 08, 2010 |
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Fujitsu Develops Low-power CMOS Technology For 32nm Generation
Fujitsu today announced the development of low-power CMOS technology for 32nm-generation logic LSIs, which makes it possible to minimize the number of necessary manufacturing processes for LSIs, and without ...
Jun 17, 2008 |
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TSMC Manufactures First Functional 65nm Embedded DRAM Device
Taiwan Semiconductor Manufacturing Company, Ltd. today announced the foundry industry’s first functional 65nm embedded DRAM customer product. The product contains millions of DRAM bits and was silicon verified first time ...
Mar 06, 2007 |
3.5 / 5 (2) |
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NEC Electronics Introduces Industry's First Ultra-Low-Power 55-nanometer Embedded DRAM Technology
NEC Electronics today announced the industry's first 55- nanometer CMOS-compatible embedded DRAM (eDRAM) technology, UX7LSeD.
Sep 13, 2006 |
1.5 / 5 (6) |
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Applied Materials Announces Breakthrough in Interface Engineering Technology for 65-45nm Transistors
Applied Materials, Inc. today announced a key advancement in nano-scale interface engineering with its new Applied Siconi Preclean process for fabricating leading-edge transistor contacts.
Sep 20, 2005 |
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IMEC to create solutions for sub-45nm CMOS scaling
Together with its CMOS core partners, IMEC will announce several research breakthroughs on new gate-stack technologies and multiple-gate FET (MuGFET) devices at the 2005 Symposium on VLSI Technology. A combination of advances ...
Jun 17, 2005 |
4 / 5 (2) |
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TSMC Unveils Nexsys 65nm Process Technology Plans
Taiwan Semiconductor Manufacturing Company, unveiled its newest semiconductor manufacturing process today at a Technology Symposium attended by over 400 of the industry’s leading IC companies. First wafers are expected in ...
May 03, 2005 |
2 / 5 (1) |
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TI Delivers Industry's First Wireless Digital Baseband Processor on Advanced 65-nm Process
Texas Instruments Incorporated (TI) (NYSE: TXN) announced it is delivering fully functional wireless digital baseband devices from its advanced 65-nanometer (nm) CMOS process technology. The announcement fulfills TI's commitment ...
Mar 09, 2005 |
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Development of Transistor with New Metal Gate Electrode & High-K Gate Dielectric
NEC today announced the development of a transistor featuring a new gate stack structure using a Hf-based high-k dielectric (*1) and a metal gate electrode (*2), which simultaneously realizes significant gate leakage suppression and im ...
Dec 17, 2004 |
3.7 / 5 (14) |
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List of search results for nickel silicide
