Imec and Panasonic demonstrate breakthrough RRAM cell

Imec and Panasonic Corp. announced today that they have fabricated a 40nm TaOx-based RRAM (resistive RAM) technology with precise filament positioning and high thermal stability. This breakthrough result paves the way to ...

Rice's silicon oxide memories catch manufacturers' eye

(Phys.org) —Rice University's breakthrough silicon oxide technology for high-density, next-generation computer memory is one step closer to mass production, thanks to a refinement that will allow manufacturers to fabricate ...

Imec presents breakthrough results in resistive-switching (R)RAM

At this week’s VLSI Technology Symposium (Honolulu, Hawaii), Imec presents significant improvements in performance and reliability of RRAM cells by process improvements and clever stack-engineering, and imec introduces ...

Research team has developed a fully functional flexible memory

The team of Professor Keon Jae Lee (Department of Materials Science and Engineering, KAIST) has developed fully functional flexible non-volatile resistive random access memory (RRAM) where a memory cell can be randomly accessed, ...

Imec achieves breakthroughs in enabling future DRAM and RRAM

In the frame of its research on future memory architectures, imec has made breakthroughs for both DRAM and RRAM memories. For DRAM, MIMcap (metal-insulator-metal capacitor) was established as a clear candidate for 1X DRAM ...

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