News tagged with strained silicon
Stretching silicon: A new method to measure how strain affects semiconductors
Nov 03, 2008 |
3.8 / 5 (4) |
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(PhysOrg.com) -- University of Wisconsin-Madison engineers and physicists have developed a method of measuring how strain affects thin films of silicon that could lay the foundation for faster flexible electronics.
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Stress Management: X-Rays Reveal Si Thin-Film Defects
Jul 06, 2006 |
4.3 / 5 (7) |
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Pile-ups, bad on the freeway, also are a hazard for the makers of high-performance strained-silicon semiconductor devices. A sensitive X-ray diffraction imaging technique developed by researchers at the National Institute ...
Silicon superlattices: New waves in thermoelectricity
Apr 01, 2009 |
3.7 / 5 (7) |
1
(PhysOrg.com) -- A University of Wisconsin-Madison research team has developed a new method for using nanoscale silicon that could improve devices that convert thermal energy into electrical energy.
Advanced engineered substrates boost chip performance
Feb 21, 2008 |
3 / 5 (2) |
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A single platform that combines the benefits of strained silicon and silicon-on-insulator technologies hopes to offer much improved performance for future chip generations.
Applied Materials and AmberWave Collaborate to Deliver 300mm Strained Silicon Technology
Dec 15, 2004 |
5 / 5 (1) |
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Applied Materials, Inc. has entered into an agreement with AmberWave Systems Corp. to license AmberWave's strained silicon intellectual property (IP) for Applied's use on its benchmark Applied Centura RP Epi system. Using ...
Modelling nano-worlds
Aug 10, 2009 |
5 / 5 (1) |
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(PhysOrg.com) -- Modelling the fabrication processes for integrated circuits can slash production development time and costs by up to 40%. But as transistors, already at nano-scales, become ever smaller, researchers are modelling ...
UMC Announces Industry's First 28nm SRAMs
Oct 27, 2008 |
4.3 / 5 (3) |
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UMC, a leading global semiconductor foundry, today announced that it has manufactured the foundry industry's first fully functional 28nm SRAM chips. The chips are based on UMC's independently developed low-leakage (LL) process ...
Strained silicon carries light for cheaper commercial electronics
May 23, 2006 |
4.9 / 5 (64) |
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By physically compressing a silicon waveguide – and thus allowing variations in the way light travels through the material – scientists have discovered a key to creating a silicon electro-optic modulator. This ...
SiGen Granted Key Strained-Silicon Substrate Patent
Oct 04, 2004 |
1 / 5 (1) |
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Silicon Genesis Corporation (SiGen) announced today that it has received a key patent in the area of fabricating strained silicon and silicon-on-insulator (SOI) substrates using a layer transfer process used in next-generation high-speed and low- ...
Tension in the nanoworld
Jan 23, 2009 |
4.5 / 5 (2) |
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(PhysOrg.com) -- A joint team of researchers at CIC nanoGUNE (San Sebastian, Spain) and the Max Planck Institutes of Biochemistry and Plasma Physics (Munich, Germany) report the non-invasive and nanoscale ...
Breakthrough in Silicon Technology: Wafer-Level Strained Silicon Technology Announced by SiGen
Aug 11, 2004 |
2.7 / 5 (7) |
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Silicon Genesis Corporation (SiGen) announced today that it has successfully developed a new wafer-level strained substrate technology, called “Next-Generation Strain” or NGS. NGS features uniaxial strain instead ...
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