News tagged with sum gate
Measuring quantum information without destroying it
Jan 15, 2009 |
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(PhysOrg.com) -- One of the Holy Grails - so to speak - of science involves building quantum computers that can perform, with accuracy, the computations too advanced and too large for classical computers. While we remain ...
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Organic flash memory developed
Dec 17, 2009 |
4.6 / 5 (19) |
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(PhysOrg.com) -- Researchers at the University of Tokyo have developed a non-volatile memory that has the same basic structure as a flash memory but is made from cheap, flexible, organic materials.
Physicists Demonstrate Quantum Memory with Matter Qubits
Jul 03, 2009 |
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(PhysOrg.com) -- For the first time, scientists have successfully operated a quantum gate between two remote particles of matter, marking an important step toward the development of a quantum computer. In ...
Scientists demonstrate all-fiber quantum logic
May 28, 2009 |
4.3 / 5 (13) |
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A team of physicists and engineers have demonstrated all-fibre quantum logic, where single photons are generated and used to perform the controlled-NOT quantum logic gate in optical fibres with high fidelity.
Paramount in trial deal to supply DVDs to Redbox
Aug 26, 2009 |
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(AP) -- Movie studio Paramount Pictures is following the lead of Lions Gate Entertainment Corp. and Sony Corp. by agreeing to supply films to $1-per-night DVD rental kiosk company Redbox.
Life after silicon: Using exotic materials to help microchips keep improving
Dec 08, 2009 |
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(PhysOrg.com) -- The huge increases in the power and capacity of computers, cell phones and communications networks in the last 40 years have been the result of ever-shrinking silicon transistors. But silicon ...
Scientists develop world's smallest diamond transistor
Apr 14, 2009 |
4.6 / 5 (12) |
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(PhysOrg.com) -- Scientists at the University of Glasgow have developed the world’s smallest diamond transistor.
TSMC Achieves 28nm SRAM Yield Breakthrough
Aug 24, 2009 |
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Taiwan Semiconductor Manufacturing Company has become the first foundry not only to achieve 28nm functional 64Mb SRAM yield, but also to achieve it across all three 28nm nodes.
Electroluminescence from Electrolyte-Gated Carbon Nanotube Field-Effect Transistors
Sep 08, 2009 |
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Field-effect transistors (FETs) based on single-walled carbon nanotubes (SWNTs) exhibit a range of optoelectronic effects including near-infrared electroluminescence.
IMEC shows optimizations for next-generation transistors
Jul 14, 2009 |
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IMEC has achieved promising results in the race to scale CMOS to 22nm and below. The breakthroughs from its transistor scaling programs include a successful integration of the laser-anneal technique in a high-K/metal-gate ...
Fujitsu Develops World's First Gallium-Nitride HEMT for Power Supply
Jun 24, 2009 |
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Fujitsu Laboratories today announced the development of a new structure for gallium-nitride high electron-mobility transistors (GaN)(HEMT) that can minimize power loss in power supplies, thus enabling reduced ...
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