Semiconductors news

Elpida Begins Mass Production of 40nm 2-Gigabit DDR3 SDRAM

Technology / Semiconductors

Dec 22, 2009 | not rated yet | 0

Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that its Hiroshima Plant has begun volume production of 40nm process 2-gigabit DDR3 SDRAMs. Since completing development ...

Scientists improve chip memory by stacking cells

Technology / Semiconductors

Dec 21, 2009 | 4.5 / 5 (17) | 3

(PhysOrg.com) -- Scientists at Arizona State University have developed an elegant method for significantly improving the memory capacity of electronic chips.

Organic flash memory developed

Technology / Semiconductors

Dec 17, 2009 | 4.7 / 5 (20) | 3

(PhysOrg.com) -- Researchers at the University of Tokyo have developed a non-volatile memory that has the same basic structure as a flash memory but is made from cheap, flexible, organic materials.

Fujitsu Announces World's First Operation of 100W-Class Amplifiers Employing Carbon Nanotubes

Technology / Semiconductors

Dec 11, 2009 | 4.8 / 5 (6) | 1

Fujitsu Laboratories today announced that, using carbon nanotubes as heat-dissipation material in amplifier transistors, Fujitsu has become the first to achieve the successful operation of high-frequency, ...

Toshiba develops essential technology for spintronics-based MOS field-effect transistor

Technology / Semiconductors

Dec 09, 2009 | 4.5 / 5 (11) | 1

(PhysOrg.com) -- Toshiba Corporation today announced that it has developed MOSFET cell based on spin transport electronics, or spintronics, an advanced semiconductor technology that makes use of the spin and ...

Toshiba Develops High Performance CMOS Device Technology for 20nm Generation LSI

Technology / Semiconductors

Dec 09, 2009 | 5 / 5 (4) | 0

(PhysOrg.com) -- Toshiba Corporation today announced that it has developed a breakthrough technology for steep channel impurity distribution that delivers a solution to a key problem for 20nm generation CMOS ...

Life after silicon: Using exotic materials to help microchips keep improving

Technology / Semiconductors

Dec 08, 2009 | 4.5 / 5 (8) | 1

(PhysOrg.com) -- The huge increases in the power and capacity of computers, cell phones and communications networks in the last 40 years have been the result of ever-shrinking silicon transistors. But silicon ...

Panasonic Develops A Gallium Nitride (GaN) Inverter IC for Motor Drive with High Efficiency

Technology / Semiconductors

Dec 08, 2009 | 5 / 5 (2) | 0

Panasonic today announced the development of a Gallium Nitride (GaN) -based monolithic inverter integrated circuit (IC) for motor drive. The integrated six GaN-based transistors can be independently driven ...

Glasgow scientists predict the unpredictable to guide future nano-chip design

Technology / Semiconductors

Nov 29, 2009 | 4.8 / 5 (4) | 0

Scientists at the University of Glasgow, in collaboration with colleagues from Edinburgh, Manchester, Southampton and York universities, have developed technology which will help microchip designers create ...

Fujitsu Develops Technology for Low-Temperature Full-Service Direct Formation of Graphene Transistors on Large-Scale Sub

Technology / Semiconductors

Nov 27, 2009 | 5 / 5 (22) | 4

Fujitsu Laboratories today announced, as a world first, the development of a novel technology for forming graphene transistors directly on the entire surface of large-scale insulating substrates at low temperatures ...

Selling chip makers on optical computing

Technology / Semiconductors

Nov 24, 2009 | 4.6 / 5 (11) | 1

(PhysOrg.com) -- Computer chips that transmit data with light instead of electricity consume much less power than conventional chips, but so far, they've remained laboratory curiosities. Professors Vladimir ...

Elpida Completes Development of 1-Gigabit GDDR5

Technology / Semiconductors

Nov 20, 2009 | 5 / 5 (1) | 0

Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory, today announced that it had developed a 1-gigabit GDDR5 (product name: EDW1032BABG) that operates at a world-class high speed ...

Semiconductor giant Infineon upgrades outlook

Technology / Semiconductors

Nov 19, 2009 | 3.3 / 5 (3) | 0

German semi-conductor maker Infineon on Thursday upgraded its turnover and profits forecast over the next 12 months because of higher demand from the auto industry and cost cuts.

Toshiba develops molecular photoresist technology for EUV lithography

Technology / Semiconductors

Nov 17, 2009 | 1.9 / 5 (17) | 1

Toshiba Corporation today announced that it has developed a high resolution photoresist (photo-sensitive film) essential for future application of EUV (extreme ultraviolet) lithography in semiconductor fabrication, ...

New 'finFETs' promising for smaller transistors, more powerful chips

Technology / Semiconductors

Nov 10, 2009 | 4.9 / 5 (15) | 3

(PhysOrg.com) -- Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers ...

Samsung Develops Advanced Packaging Technology to Achieve a 0.6mm-thick 8-chip Package

Technology / Semiconductors

Nov 05, 2009 | 5 / 5 (2) | 0

Samsung Electronics announced today that it has developed the world's thinnest multi-die package, one that measures a mere 0.6mm in height. Designed initially for 32 gigabyte (GB) densities, the new memory ...

NXP Sets New Benchmarks for LED Drivers

Technology / Semiconductors

Nov 05, 2009 | 4 / 5 (1) | 0

NXP Semiconductors today announced three major developments in its portfolio of mains connected LED driver solutions: the success of its SSL2101 LED driver IC in matching LED lifetimes in an accelerated lifetime test; the ...

Intel Reports Breakthrough in Stacked, Cross Point Phase Change Memory Technology

Technology / Semiconductors

Oct 29, 2009 | 3.9 / 5 (11) | 4

Intel Corp. and Numonyx today announced a key breakthrough in the research of phase change memory (PCM), a new non-volatile memory technology that combines many of the benefits of today's various memory types.