Semiconductors news
World's first 300mm-fab compatible directed self-assembly process line
At next weeks SPIE Advanced Lithography conference (San Jose, CA), imec announces the successful implementation of the world first 300mm fab-compatible Directed Self-Assembly (DSA) process line all-under-one-roof ...
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Soraa LED light may dim 50-watt halogen rivals
(PhysOrg.com) -- Soraa, a Fremont, California company founded in 2008, this week launched its first product, a light that uses LEDS (light emitting diodes). The "Soraa LED MR16 lamp" is the "perfect" replacement ...
Fujitsu introduces world's fastest CMOS 14-bit digital-to-analog converter
Fujitsu Semiconductor today announced its first 3rd generation high performance Digital to Analog Converter Application Specific Standard Product (ASSP). The MB86066 Anakin DAC combines 14-bit ...
Feb 08, 2012 |
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Toshiba announces family of ultra-efficient, high-speed, low voltage MOSFETs
Toshiba today announced a new family of ultra-high-efficiency, high-speed MOSFETs that deliver significant improvements in trade-off characteristics between low on resistance (RDS(ON)) and low input capacitanc ...
Feb 06, 2012 |
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Darpa seeks new power dynamic for continuation of Moore's Law
Computational capability is an enabler for nearly every military system. But computational capability is increasingly limited by power requirements and the constraints on the ability to dissipate heat. ...
Jan 30, 2012 |
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Imec, Genalyte report disposable silicon photonics biosensor chips
Imec and Genalyte announce that they have successfully developed and produced a set of disposable silicon photonics biosensor chips to be used in Genalyte diagnostic and molecular detection equipment. The ...
Jan 25, 2012 |
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Jumpstarting computers with 3-D chips
EPFL scientist are among the leaders in the race to develop an industry-ready prototype of a 3D chip as well as a high-performance and reliable manufacturing method. The chip is composed of three or more processors ...
Jan 24, 2012 |
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Elpida Memory develops resistance RAM prototype
Elpida Memory, the world's third largest Dynamic Random Access Memory ("DRAM") manufacturer, today announced the development of its first-ever high-speed non-volatile resistance memory (ReRAM) prototype. As the ReRAM prototype ...
Jan 24, 2012 |
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Sony develops next-generation back-illuminated CMOS image sensor
Sony today announced that it has developed a new next-generation back-illuminated CMOS image sensor which embodies the continuous evolution of the camera. This image sensor layers the pixel section containing ...
Jan 24, 2012 |
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MHI develops 12-inch wafer bonding machine capable of producing 3-D integrated LSI circuits at room temperature
Mitsubishi Heavy Industries Ltd (MHI) has developed the world's first fully automated 12-inch (300 millimeters) wafer bonding machine, dubbed the "Bond Meister MWB-12-ST," capable of producing 3-dimensionally integrated LSI ...
Jan 16, 2012 |
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New silicon probe assists in disease diagnostics and drug discovery
IBM scientists have developed a flexible, non-contact microfluidic probe made from silicon can aid researchers and pathologists to investigate critical tissue samples accurately for disease diagnostics and ...
Jan 13, 2012 |
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High-speed CMOS sensors provide better images
Conventional CMOS image sensors are not suitable for low-light applications such as fluorescence, since large pixels arranged in a matrix do not support high readout speeds. A new optoelectronic component ...
Jan 03, 2012 |
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Elpida starts sample shipments of next-generation mobile RAM products
Elpida Memory, the world's third largest Dynamic Random Access Memory manufacturer, today announced that it has begun sample shipments of 4-gigabit Wide IO Mobile RAMTM and 4-gigabit DDR3 Mobile RAM (LPDDR3).
Dec 29, 2011 |
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Chip companies foresee slower growth
Microchip company executives expect the economy's continuing sluggishness to put a drag on their finances as well as their spending on new hires, capital improvements and research and development efforts next year, according ...
Dec 23, 2011 |
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Vertical silicon nanowires for nonvolatile memory devices
As electronic devices become smaller and more sophisticated, the search for compact nonvolatile memory becomes increasingly important. However, conventional silicon technologies, such as complementary metal-oxide-semiconductor ...
Dec 23, 2011 |
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Engineers build first sub-10-nm carbon nanotube transistor
Feb 01, 2012 |
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Something old, something new: Evolution and the structural divergence of duplicate genes
Jan 31, 2012 |
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The hidden nanoworld of ice crystals: Revealing the dynamic behavior of quasi-liquid layers
Jan 30, 2012 |
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Stock market network reveals investor clustering
Jan 27, 2012 |
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Of microchemistry and molecules: Electronic microfluidic device synthesizes biocompatible probes
Jan 26, 2012 |
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More News
Record conductivity achieved in strained lattice organic semiconductor
(PhysOrg.com) -- Organic semiconductors could usher in an era of foldable smartphones, better high-definition television screens and clothing made of materials that can harvest energy from the sun needed to ...
New EU project targets first 100GHz optical RAM silicon chips
A new EU project that aims to develop a 100 gigabits per second (Gbps) optical random access memory (RAM) chip has just kicked off. This chip will be the first of its kind.
Renesas develops first 40nm embedded flash memory technology IP for automotive real-time applications
Renesas Electronics today announced that it has developed the industry's first 40-nanometer (nm) memory intellectual property (IP) for automotive real-time applications. Renesas will also be the first to launch 40nm embedded ...
Quantum tunneling results in record transistor performance
(PhysOrg.com) -- Controlling power consumption in mobile devices and large scale data centers is a pressing concern for the computer chip industry. Researchers from Penn State and epitaxial wafer maker IQE ...
Researchers create tool for 'Circuit-Aware' reliability testing
(PhysOrg.com) -- A PML research team has devised a reliability data transformation methodology that could ease one of the semiconductor industrys most vexing problems: reliability qualification.
Other News
Imec reports smallest fully-functional HfO2-based Resistive RAM cell
At today's 2011 IEEE International Electron Devices Meeting (IEDM), imec presents the worlds smallest, fully-functional HfO2-based Resistive RAM (RRAM) cell, with an area of less than 10x10nm². The new cell shows ...
Fujitsu and SuVolta demonstrate ultra-low-voltage operation of SRAM down to 0.4V
Fujitsu Semiconductor Limited and SuVolta, Inc. today announced that they have successfully demonstrated ultra-low-voltage operation of SRAM (static random access memory) blocks down to 0.425V by integrating ...
Intel, Taiwan in tie-up to develop new chip
US chip giant Intel has joined hands with a top Taiwan research institute to develop a new generation of memory chips for use in lighter, energy-saving smartphones and tablets, officials said Wednesday.
New 3-D transistors promising future chips, lighter laptops
(PhysOrg.com) -- Researchers from Purdue and Harvard universities have created a new type of transistor made from a material that could replace silicon and have a 3-D structure instead of conventional flat computer chips.
Samsung to build flash memory chip line in China
Samsung Electronics, the world's largest memory chip maker, said Tuesday it would build a new production line in China for flash memory chips used in tablets and smartphones.
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