Semiconductors news

NEC Integrates NanoBridge in the Cu Interconnects of Si LSI

NEC Integrates NanoBridge in the Cu Interconnects of Si LSI

Technology / Semiconductors

created 18 hours ago | popularity 3 / 5 (2) | comments 1

NEC Corporation, in collaboration with the National Institute of Materials Science, today announced the successful integration of NanoBridge, a solid electrolyte non-volatile crossbar switch, in Cu interconnects ...


3-D microchips for more powerful and environmentally friendly computers

3-D microchips for more powerful and environmentally friendly computers

Technology / Semiconductors

created Dec 11, 2009 | popularity 4.6 / 5 (14) | comments 4

Not so long ago our computers had a single core which had to be boosted for performance - making each machine into a great central heating system. Beyond 85° C, however, electronic components become unstable. ...


Fujitsu Succeeds in World's First Operation of 100W-Class Amplifiers Employing Carbon Nanotubes for Next-Generation Mobile Base

Fujitsu Announces World's First Operation of 100W-Class Amplifiers Employing Carbon Nanotubes

Technology / Semiconductors

created Dec 11, 2009 | popularity 4.8 / 5 (6) | comments 1

Fujitsu Laboratories today announced that, using carbon nanotubes as heat-dissipation material in amplifier transistors, Fujitsu has become the first to achieve the successful operation of high-frequency, ...


Toshiba develops essential technology for spintronics-based MOS field-effect transistor

Toshiba develops essential technology for spintronics-based MOS field-effect transistor

Technology / Semiconductors

created Dec 09, 2009 | popularity 4.5 / 5 (11) | comments 1

(PhysOrg.com) -- Toshiba Corporation today announced that it has developed MOSFET cell based on spin transport electronics, or spintronics, an advanced semiconductor technology that makes use of the spin and ...


Life after silicon

Life after silicon: Using exotic materials to help microchips keep improving

Technology / Semiconductors

created Dec 08, 2009 | popularity 4.5 / 5 (8) | comments 1

(PhysOrg.com) -- The huge increases in the power and capacity of computers, cell phones and communications networks in the last 40 years have been the result of ever-shrinking silicon transistors. But silicon ...


Toshiba Develops High Performance CMOS Device Technology for 20nm Generation LSI

Toshiba Develops High Performance CMOS Device Technology for 20nm Generation LSI

Technology / Semiconductors

created Dec 09, 2009 | popularity 5 / 5 (4) | comments 0

(PhysOrg.com) -- Toshiba Corporation today announced that it has developed a breakthrough technology for steep channel impurity distribution that delivers a solution to a key problem for 20nm generation CMOS ...


Gallium Nitride (GaN) Inverter IC

Panasonic Develops A Gallium Nitride (GaN) Inverter IC for Motor Drive with High Efficiency

Technology / Semiconductors

created Dec 08, 2009 | popularity 5 / 5 (2) | comments 0

Panasonic today announced the development of a Gallium Nitride (GaN) -based monolithic inverter integrated circuit (IC) for motor drive. The integrated six GaN-based transistors can be independently driven ...



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