Semiconductors news
Scientists improve chip memory by stacking cells
Dec 21, 2009 |
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(PhysOrg.com) -- Scientists at Arizona State University have developed an elegant method for significantly improving the memory capacity of electronic chips.
Organic flash memory developed
Dec 17, 2009 |
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(PhysOrg.com) -- Researchers at the University of Tokyo have developed a non-volatile memory that has the same basic structure as a flash memory but is made from cheap, flexible, organic materials.
Toshiba Launches Highest Density Embedded NAND Flash Memory Modules
Dec 15, 2009 |
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Toshiba Corporation today announced the launch of a 64 gigabyte (GB) embedded NAND flash memory module, the highest capacity yet achieved in the industry.
Elpida Begins Mass Production of 40nm 2-Gigabit DDR3 SDRAM
Dec 22, 2009 |
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Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that its Hiroshima Plant has begun volume production of 40nm process 2-gigabit DDR3 SDRAMs. Since completing development ...
3-D microchips for more powerful and environmentally friendly computers
Dec 11, 2009 |
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Not so long ago our computers had a single core which had to be boosted for performance - making each machine into a great central heating system. Beyond 85° C, however, electronic components become unstable. ...
Fujitsu Announces World's First Operation of 100W-Class Amplifiers Employing Carbon Nanotubes
Dec 11, 2009 |
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Fujitsu Laboratories today announced that, using carbon nanotubes as heat-dissipation material in amplifier transistors, Fujitsu has become the first to achieve the successful operation of high-frequency, ...
Taiwan unveils super-tiny microchip
Dec 16, 2009 |
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Taiwan has developed tiny microchips that could lead to lighter and cheaper laptops or mobile phones, researchers and observers said Wednesday.
Toshiba develops essential technology for spintronics-based MOS field-effect transistor
Dec 09, 2009 |
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(PhysOrg.com) -- Toshiba Corporation today announced that it has developed MOSFET cell based on spin transport electronics, or spintronics, an advanced semiconductor technology that makes use of the spin and ...
Life after silicon: Using exotic materials to help microchips keep improving
Dec 08, 2009 |
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(PhysOrg.com) -- The huge increases in the power and capacity of computers, cell phones and communications networks in the last 40 years have been the result of ever-shrinking silicon transistors. But silicon ...
Selling chip makers on optical computing
Nov 24, 2009 |
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(PhysOrg.com) -- Computer chips that transmit data with light instead of electricity consume much less power than conventional chips, but so far, they've remained laboratory curiosities. Professors Vladimir ...
NEC Integrates NanoBridge in the Cu Interconnects of Si LSI
Dec 14, 2009 |
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NEC Corporation, in collaboration with the National Institute of Materials Science, today announced the successful integration of NanoBridge, a solid electrolyte non-volatile crossbar switch, in Cu interconnects ...
New 'finFETs' promising for smaller transistors, more powerful chips
Nov 10, 2009 |
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(PhysOrg.com) -- Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers ...
Fujitsu Develops Technology for Low-Temperature Full-Service Direct Formation of Graphene Transistors on Large-Scale Sub
Nov 27, 2009 |
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Fujitsu Laboratories today announced, as a world first, the development of a novel technology for forming graphene transistors directly on the entire surface of large-scale insulating substrates at low temperatures ...
Elpida Completes Development of 65nm XS Version 1-Gigabit DDR3 SDRAM
Dec 17, 2009 |
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Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that it had completed development of a 65nm XS extra-shrink version 1-Gigabit DDR3 SDRAM that is as cost-competitive as ...
Toshiba Develops High Performance CMOS Device Technology for 20nm Generation LSI
Dec 09, 2009 |
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(PhysOrg.com) -- Toshiba Corporation today announced that it has developed a breakthrough technology for steep channel impurity distribution that delivers a solution to a key problem for 20nm generation CMOS ...
