FinFETs are known to be an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring a semiconducting channel vertically wrapped by conformal gate electrodes. It was first proposed in 1990s in order ...
Vacuum tubes initially played a central role in the development of electronic devices. A few decades ago, however, researchers started replacing them with semiconductor transistors, small electronic components that can be ...
Researchers at Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU) have developed a simple yet accurate method for finding defects in the latest generation of silicon carbide transistors. This will speed up the process ...
In microelectronic devices, the bandgap is a major factor determining the electrical conductivity of the underlying materials. Substances with large bandgaps are generally insulators that do not conduct electricity well, ...
Researchers at the National Institute of Information and Communications Technology (NICT) and Tokyo University of Agriculture and Technology (TUAT) demonstrate a vertical Ga2O3 metal-oxide-semiconductor field-effect transistor ...
This week, at the 2018 IEEE International Electron Devices Meeting (IEDM), imec, the world-leading research and innovation hub in nanoelectronics and digital technologies, presents a 300mm-wafer platform for MOSFET devices ...
Hitachi, Ltd. today announced the development of an original energy saving power semiconductor structure, TED-MOS, using next-generation silicon carbide (SiC) material that contributes to saving energy in electric vehicles ...
When power generators like windmills and solar panels transfer electricity to homes, businesses and the power grid, they lose almost 10 percent of the generated power. To address this problem, scientists are researching new ...
Transistors, the building blocks of modern devices, act like electronic switches controlling the flow of current across circuits. In the last few decades, they have shrunk more than 1000 times in size, making devices such ...
At this week's 2017 International Electron Devices Meeting (IEDM), imec, the research and innovation hub in nano-electronics and digital technology, reports on multiple key process optimizations for vertically stacked gate-all-around ...
