A research group in Japan announced that it has quantified for the first time the impacts of three electron-scattering mechanisms for determining the resistance of silicon carbide (SiC) power semiconductor devices in power ...
An entirely new model of the way electrons are briefly trapped and released in tiny electronic devices suggests that a long-accepted, industry-wide view is just plain wrong about the way these captured electrons affect the ...
Silicon has provided enormous benefits to the power electronics industry. But performance of silicon-based power electronics is nearing maximum capacity.
Small satellites provide a cheap, responsive alternative to larger, more expensive satellites. As demand grows, engineers must adapt these "nanosatellites" to provide greater data returns. NASA, in collaboration with educational ...
In the semiconductor industry, there is currently one main strategy for improving the speed and efficiency of devices: scale down the device dimensions in order to fit more transistors onto a computer chip, in accordance ...
Tensile mechanical stress can have a useful effect for some transistors, where the resulting atomic strain allows its current-carrying electron-hole pairs better mobility. However, when that stress is applied to the whole ...
As consumers around the world have become increasingly dependent on electronics, the transistor, a semiconductor component central to the operation of these devices, has become a critical subject of scientific research. Over ...
Europium silicide has for some time attracted the attention of scientists. Recognized as being promising for electronics and spintronics, this material has recently been submitted by a team of physicists from Poland, Germany ...
At this week's IEEE IEDM conference, world-leading research and innovation hub for nano-electronics and digital technology, imec, reported for the first time the CMOS integration of vertically stacked gate-all-around (GAA) ...
Tokyo Tech researchers demonstrate operation energy-savings in a low price silicon power transistor structure by scaling down in all three dimensions.
